| Allicdata Part #: | IXTX1R4N450HV-ND |
| Manufacturer Part#: |
IXTX1R4N450HV |
| Price: | $ 42.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | 2500V TO 4500V VERY HI VOLT PWR |
| More Detail: | N-Channel 4500V 1.4A (Tc) 960W (Tc) Through Hole T... |
| DataSheet: | IXTX1R4N450HV Datasheet/PDF |
| Quantity: | 90 |
| 1 +: | $ 38.46780 |
| 30 +: | $ 33.26900 |
| Vgs(th) (Max) @ Id: | 6V @ 250µA |
| Package / Case: | TO-247-3 Variant |
| Supplier Device Package: | TO-247PLUS-HV |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 960W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 88nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 40 Ohm @ 50mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
| Drain to Source Voltage (Vdss): | 4500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTX1R4N450HV is a high-performance MOSFET (metal-oxide-semiconductor field-effect transistor). It is a single-gate, N-channel MOSFET with power dissipation rated at 1.4W (at Tj = 25°C). The application field of this specific model include DC power supplies, consumer electronics, motor control and amplifier circuits.
MOSFETs are three-terminal semiconductor devices, used as switches or amplifiers. The terminals are the source, gate and drain. The gate of a MOSFET serves as input and controls the current that goes from the source to drain. It is further divided into two types - depletion-type MOSFET (D-MOSFET) and enhancement-type MOSFET (E-MOSFET). The IXTX1R4N450HV is an E-MOSFET.
E-MOSFETs use a thin oxide layer that separates the gate from the rest of the transistor and uses a high voltage to charge the gate. An electric field is then created between the gate and the source or drain. This electric field further increases or decreases the current that passes through the channel, depending on the input. It can also be used to switch on or off the MOSFET device.
In operation, when the voltage applied to the gate is lower than the threshold voltage, the electric field created between the source and drain decreases with increasing the voltage, allowing the current in the channel to increase. When the voltage reaches the threshold voltage, the electric field created between the source and drain will further increase and will decrease with increased voltage levels, thus allowing the current to decrease.
The IXTX1R4N450HV MOSFET has a maximum input capacitance of 74pF, which helps reduce EMI (electromagnetic interference) in sensitive circuits. It also has a very low on-resistance of 0.17Ω, which reduces power consumption and increases power efficiency. In addition, the IXTX1R4N450HV is designed for operating in a wide range of temperature ranges, from -55°C to +150°C.
In summary, the IXTX1R4N450HV is an N-channel single-gate enhancement type MOSFET suited for high-performance applications, such as DC power supplies, consumer electronics, motor control and amplifier circuits. It has a low on-resistance of 0.17Ω and has a maximum input capacitance of 74pF, which helps reduce EMI levels.
The specific data is subject to PDF, and the above content is for reference
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IXTX1R4N450HV Datasheet/PDF