IXTX20N150 Allicdata Electronics
Allicdata Part #:

IXTX20N150-ND

Manufacturer Part#:

IXTX20N150

Price: $ 13.82
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1500V 20A PLUS247
More Detail: N-Channel 1500V 20A (Tc) 1250W (Tc) Through Hole P...
DataSheet: IXTX20N150 datasheetIXTX20N150 Datasheet/PDF
Quantity: 1000
1 +: $ 13.82000
10 +: $ 13.40540
100 +: $ 13.12900
1000 +: $ 12.85260
10000 +: $ 12.43800
Stock 1000Can Ship Immediately
$ 13.82
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: PLUS247™-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1 Ohm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 1500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTX20N150 is a field-effect transistor (FET) that is a type of semiconductor device particularly suited for switching applications. This N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) provides fast switching and high reliability under extreme conditions. It is commonly found in many industrial and consumer electronics applications, as well as automotive and aviation systems.

The IXTX20N150 is a monolithic three-terminal device that typically consists of two layers of doped silicon substrate covered by thin layers of an insulator. Top and bottom gates are used to control the flow of electrons. At the center is a third terminal which is the source of the current. The source terminal, or drain, and the other two gate terminals are commonly referred to as the gate, source and drain.

The IXTX20N150 is particularly well suited for applications requiring low power consumption, high performance and low on-resistance (RDS(on)). Typical applications include load switching, motor control, solenoid control and motor protection. It is also suitable for use in power amplifiers, power supplies and high-frequency switching circuits.

The IXTX20N150\'s working principle is based on the FET characteristic of controlling current flow using a thin layer of an insulating material or oxide, which is placed between two metal layers. When a positive voltage is applied to the gate of the device, holes are created in the oxide layer, allowing current to pass through. When the voltage is removed, the holes are again closed causing the current to stop, thus the device acts like a switch.

The IXTX20N150 is capable of providing fast switching speeds and low on-resistance (RDS(on)) making it well suited for high-side switching, load switching and motor protection applications. It has a maximum drain-source voltage of 20V and a typical drain current at 25C of 300A. It is available in both a leaded and lead-free package, making it suitable for both lead-free and traditional manufacturing processes.

The IXTX20N150 is a versatile FET device that is well suited for loads switching, motor protection and DC-DC power supplies applications. Its fast switching speeds and low on-resistance make it a reliable choice for high-side switching, motor control and solenoid control. Its fast switching, high reliability, and small footprint make it the ideal choice for many industrial and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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