Allicdata Part #: | IXTX90N25L2-ND |
Manufacturer Part#: |
IXTX90N25L2 |
Price: | $ 20.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 250V 90A PLUS247 |
More Detail: | N-Channel 250V 90A (Tc) 960W (Tc) Through Hole PLU... |
DataSheet: | IXTX90N25L2 Datasheet/PDF |
Quantity: | 240 |
1 +: | $ 18.47790 |
30 +: | $ 15.70360 |
120 +: | $ 14.59500 |
Vgs(th) (Max) @ Id: | 4.5V @ 3mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 960W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 23000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 640nC @ 10V |
Series: | Linear L2™ |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTX90N25L2 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) produced by IXYS Integrated Circuits Division for use in high-power switching applications. The IXTX90N25L2 is available in a TO-247 package and includes a high cell density, low RDS(on), and superior switching performance. Additionally, the IXTX90N25L2 offers fast switching, good thermal management, and small footprint.
MOSFETs are solid-state devices which allow power control by creating a conducting channel between the source and drain. In electronic devices the electrical conductivity of the channel is adjusted by an external voltage applied to the gate of the MOSFET. The IXTX90N25L2 is no exception, as it performs switching operations at a wide range of frequencies and temperatures while providing superior efficiency and reliability.
The operating principles of the IXTX90N25L2 are rooted in the basic principles of MOSFETs which state that when a voltage is applied to the gate of the MOSFET, the electrical resistance between the source and the drain decreases significantly. This is due to the electrons present in the channel increasing, in turn, increasing the current flow between the source and the drain. This is the basic working principle of MOSFETs, and the IXTX90N25L2 is designed to utilize this principle of operation to provide superior switching operations.
The IXTX90N25L2 is suitable for high-power applications in areas such as power supply and motor control. The device’s maximum drain current capacity is rated at 100A and it can handle up to 50V at the drain. It offers a fast switching speed with a typical turn-off time of 200ns. Combining its maximum drain current capacity with its fast switching speed, the IXTX90N25L2 is suitable for various high-power switching applications such as power converters, motor control, and power supplies.
The IXTX90N25L2 is also designed for superior thermal management with an operating temperature range of -55°C to 125°C. The device’s thermal performance is further enhanced due to its low drain-source on-resistance, which is rated at 30mΩ. This low on-resistance provides superior thermal management, thereby allowing for higher currents to be switched with minimal heat dissipation.
In addition to its superior performance, the IXTX90N25L2 is designed for efficient integration in electronics. Its TO-247 package is a highly efficient solution, allowing for easy installation, higher density, and better thermal management. The IXTX90N25L2 is also designed to be used in medium to high voltage applications, as it is capable of withstanding up to 500V.
In conclusion, the IXTX90N25L2 is an excellent choice for high-power switching applications such as motor control systems and power supplies. Its superior switching versatility, superior thermal performance, and small size makes it ideal for various applications. Its maximum drain current capacity of 100A and its robust TO-247 package enable efficient integration and installation in various high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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