IXTX24N100 Allicdata Electronics
Allicdata Part #:

IXTX24N100-ND

Manufacturer Part#:

IXTX24N100

Price: $ 13.58
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 24A PLUS247
More Detail: N-Channel 1000V 24A (Tc) 568W (Tc) Through Hole PL...
DataSheet: IXTX24N100 datasheetIXTX24N100 Datasheet/PDF
Quantity: 1000
30 +: $ 12.34110
Stock 1000Can Ship Immediately
$ 13.58
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Package / Case: TO-247-3
Supplier Device Package: PLUS247™-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 568W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 400 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTX24N100 Application Field and Working Principle

IXTX24N100 is an industry-leading vertical single high power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) from IXYS Corporation. It was designed       to provide high efficiency and improved power ratings in various power applications. The device is suitable for industrial, medical, and automotive       applications, as well as switching applications in the AC and DC power systems.

IXTX24N100\'s Key Features

IXTX24N100 is ideal for applications that require high current, fast switching, low gate charge, and low on-state resistance. It features a low thermal resistance with a TO-264 surface mount package offering a wide range of operating temperatures. With the 100V drain voltage, the IXTX24N100 has a wide gate-to-drain breakdown voltage rating, with a gate threshold voltage of 4V. It also has a high gate storage charge, allowing for fast switching times, as well as improved dv/dt and dI/dt ratings. In addition, this device also offers improved efficiency with a fast switching speed.

IXTX24N100\'s Working Principle

MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are devices that control the flow of electrons in a circuit. They allow a small, voltage-controlled current to flow through a switch, thus controlling the flow of current from one side of the circuit to the other. The IXTX24N100 works in a similar fashion, enabling the user to control the output power with a minimal amount of voltage, allowing for maximum efficiency.

The MOSFET consists of an insulated gate electrode, which controls the flow of electrons. The gate is electrically charged, maintaining an electric potential, or a potential difference across the gate. When a voltage is applied to the gate, it will attract or repel electrons through the gate, and depending on the type of MOSFET, a current will flow between the source and drain. The IXTX24N100 is a vertical single high power MOSFET, meaning the voltage at the gate is the same as the voltage at the drain. This makes it ideal for applications that require a high current, fast switching speed, and high efficiency.

Application Fields

The IXTX24N100 is ideal for applications requiring fast switching, high current, and low on-state resistance. Some of the key applications where this device can be used include industrial, medical, automotive, and switching applications in AC and DC power systems. It can also be used in a variety of other applications, such as for motor control, battery management, voltage conversion, and to improve the power efficiency of computers.

The MOSFET is also a versatile device and can be used in a wide variety of power electronic systems, from low-voltage/low-power systems to high-voltage/high-power systems. This device can also be used in a variety of other applications, such as for motor control, battery management, voltage conversion, and for improving the efficiency of computer systems.

Conclusion

The IXTX24N100 is a vertical single high power MOSFET from IXYS Corporation that was designed to provide high efficiency and improved power ratings. It features a low thermal resistance, high gate storage charge, and a wide gate-to-drain breakdown voltage rating, allowing for fast switching speeds. The device is suitable for industrial, medical, and automotive applications, as well as switching applications in AC and DC power systems.

The specific data is subject to PDF, and the above content is for reference

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