| Allicdata Part #: | IXTX5N250-ND |
| Manufacturer Part#: |
IXTX5N250 |
| Price: | $ 57.44 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 2500V 5A PLUS247 |
| More Detail: | N-Channel 2500V 5A (Tc) 960W (Tc) Through Hole PLU... |
| DataSheet: | IXTX5N250 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 57.44000 |
| 10 +: | $ 55.71680 |
| 100 +: | $ 54.56800 |
| 1000 +: | $ 53.41920 |
| 10000 +: | $ 51.69600 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | PLUS247™-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 960W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 8560pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8.8 Ohm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
| Drain to Source Voltage (Vdss): | 2500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTX 5N250 is an advanced single N-channel Field Effect Transistor (FET). It is used in switching applications ranging from low voltage and current circuits. Its high level of insulation makes it ideal for circuit designs with multiple power sources.
The IXTX 5N250 is a MOSFET type FET, a type of control transistor. This MOSFET uses theMOSIET (Metal Oxide Semiconductor Insulated Gate Transistor) technologythat uses an insulated gate in order to control the transfer of electronsthrough the substrate. This allows the user to switch between different levels of current and voltage with a single MOSFET.
The IXTX 5N250 has a large number of advantages over other types of FETs. Its large ammeter capacity makes it suitable for applications that need to conduct high levels of current, such as motor control stages and switching regulator circuits. It also has a low input power threshold and low power consumption which makes it ideal for applications where power is a concern. Furthermore, it has a low thermal resistance, allowing it to better manage heat when compared to other types of FETs.
In terms of the working principles of the IXTX 5N250, it has been designed to function as a switch. By applying an input voltage of a certain level to the gate terminal, the source-drain current can be controlled. In other words, the current between the source and drain terminals can be either fully cut off or fully allowed to flow through, depending on the voltage that is applied. This feature is useful for circuits such as voltage regulators and motor control stages, where the on/off switching of the transistors can be used to control output.
The IXTX 5N250 can be used in a wide range of applications from low voltage and current circuits to high current and voltage switching. It can be used for protection circuits and in interface designs. It can also be used in logic circuits and as a multiplexer. Its ability to be controlled by its own gate terminal, with no external control, makes it stand out from other types of FETs.
In summary, the IXTX 5N250 is an advanced FET type. Its MOSIET technology makes it usable in multiple power source circuits. It has a good current rating, low input power threshold and low power consumption. It is used as a switch to control output, and can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IXTX5N250 Datasheet/PDF