IXYH10N170C Allicdata Electronics
Allicdata Part #:

IXYH10N170C-ND

Manufacturer Part#:

IXYH10N170C

Price: $ 5.95
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1.7KV 36A TO247
More Detail: IGBT 1700V 36A 280W Through Hole TO-247 (IXYH)
DataSheet: IXYH10N170C datasheetIXYH10N170C Datasheet/PDF
Quantity: 15
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 5.40540
10 +: $ 4.86675
25 +: $ 4.43444
100 +: $ 4.00176
250 +: $ 3.67728
500 +: $ 3.35281
1000 +: $ 2.92020
Stock 15Can Ship Immediately
$ 5.95
Specifications
Power - Max: 280W
Supplier Device Package: TO-247 (IXYH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 17ns
Test Condition: 850V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C: 14ns/130ns
Gate Charge: 46nC
Input Type: Standard
Switching Energy: 1.4mJ (on), 700µJ (off)
Series: XPT™
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Current - Collector Pulsed (Icm): 84A
Current - Collector (Ic) (Max): 36A
Voltage - Collector Emitter Breakdown (Max): 1700V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXYH10N170C is a type of insulated gate bipolar transistor (IGBT) manufactured by Infineon Technologies, a part of their Fairchild Semiconductor range. It is a single IGBT, a high power insulated gate bipolar transistor (IGBT) designed for a wide range of applications including motor control, AC and DC switching. The IXYH10N170C has a nominal collector current range of 1700A and a peak collector current of 3500A with a low minimum and low maximum on-state voltage. It also offers excellent thermal cycling characteristics and good on-resistance.

In order to understand the IXYH10N170C’s application field and working principle, it is important to first explore how an IGBT functions. An IGBT is a three-terminal semiconductor device that acts like a combination of a MOSFET (metal-oxide semiconductor field-effect transistor) and a bipolar junction transistor. It has a gate terminal, a collector terminal and an emitter terminal. When the gate is not triggered, the device acts similarly to a MOSFET, which is both off and non-conductive. When a sufficient voltage is applied between the gate and the collector terminal, the device acts as a bipolar junction transistor, allowing current to flow from the collector to the emitter terminal.

The IXYH10N170C offers a significant decrease in power loss due to its low saturation voltage. This makes it an excellent device for use in a variety of applications such as motor control, power electronic converters, and AC and DC switching. Due to its low on-resistance and high current handling capability, it is an ideal choice for power electronics where high power conversion efficiency is desired.

IXYH10N170C IGBTs can be used in motor control applications to provide reliable, efficient motor control and higher current handling capabilities. Additionally, IXYH10N170Cs are suitable for use in AC and DC switching, such as high power switching applications such as electric vehicles and power electronics.

The IXYH10N170C works on the principle of a voltage deriving an electric current. When a voltage is applied across the collector terminal and the emitter terminal, an electric current will flow depending on the voltage applied. Depending on the gate voltage, the collector current can be turned on or off. Similarly, when the gate voltage is removed from the collector terminal, the device is turned off.

In summary, the IXYH10N170C is a single IGBT specifically designed for high power applications in motor control, AC and DC switching, and high power electric vehicles and power electronics. This IGBT offers excellent thermal cycling characteristics and a low saturation voltage for minimal power loss, making it an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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