IXYH40N65B3D1

Input Type:	Standard
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	37ns
Test Condition:	400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C:	20ns/140ns
Gate Charge:	68nC
Series:	XPT™, GenX3™
Switching Energy:	800µJ (on), 1.25mJ (off)
Power - Max:	300W
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 40A
Current - Collector Pulsed (Icm):	195A
Current - Collector (Ic) (Max):	86A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	--
Part Status:	Active

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Overview

The IXYH40N65B3D1 is an insulated gate bipolar transistor, also known as an IGBT. It is a type of transistor specifically designed to handle high power applications. It is a ‘single’ IGBT, meaning it is an IGBT composed of one n-type semiconductor and one p-type semiconductor. This type of IGBT is suitable for use in a wide range of applications, from motor drives to power converters, due to its high current and wattage ratings and low switching losses. In this document, we will discuss the working principles and applications of the IXYH40N65B3D1.

IGBTs

An insulated gate bipolar transistor (IGBT) is a type of transistor designed to handle high power applications, particularly those requiring high switching frequencies, such as motor drives and power converters. IGBTs are typically composed of two terminals, an anode and a cathode, connected to the two semiconductors. The IGBT contains an insulated gate, which can be energized, allowing current to flow through it.The unique construction of an IGBT allows it to combine the properties of two transistors, the Bipolar Junction Transistor (BJT) and the Metal Oxide Semiconductor FET (MOSFET). This makes it well-suited for high-power applications, as it can be used to switch large currents and voltages with low losses.

IXYH40N65B3D1

The IXYH40N65B3D1 is a ‘single’ IGBT. This means that it is composed of one n-type semiconductor and one p-type semiconductor. The device is rated for a maximum collector-to-emitter voltage of 600V, and a maximum collector current of 100A. It has a maximum operating temperature of 150°C, and an on-state voltage drop of 1.95V at 100A.

Working Principle

The IXYH40N65B3D1 works by having a gate voltage applied to the insulated gate. If a positive gate voltage is applied, the electrons in the n-type semiconductor are attracted to the gate, and the current flow is switched on. If the gate voltage is removed or zeroed, the electrons are no longer attracted to the gate and the current flow is switched off.The IGBT can be used to control the current flow by varying the gate voltage. If the gate voltage is changed, so is the current flow, enabling a precise control of the output current. The IXYH40N65B3D1 also has low switching losses, making it more efficient than other transistor types for high power applications.

Application Field

The IXYH40N65B3D1 is well-suited for high power applications. It can be used in motor drives, where it can be used to control the speed and torque of a motor. It can also be used in power converters, where it can be used to convert AC voltage and current to different levels. It can also be used as a fast switch for power supplies, and for other high power applications.

Conclusion

The IXYH40N65B3D1 is a single IGBT with a high current and wattage rating, making it suitable for use in a variety of high power applications. Its insulated gate allows it to combine the properties of two transistors, making it well-suited for high-power applications with low losses. It has a rated collector-to-emitter voltage of 600V, and a maximum operating temperature of 150°C, making it suitable for use in a wide range of applications, such as motor drives and power converters.

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