IXYH30N120C3

Power - Max:	500W
Supplier Device Package:	TO-247 (IXYH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	600V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C:	19ns/130ns
Gate Charge:	69nC
Input Type:	Standard
Switching Energy:	2.6mJ (on), 1.1mJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	3.3V @ 15V, 30A
Current - Collector Pulsed (Icm):	145A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

IXYH30N120C3 is a type of insulated gate bipolar transistor (IGBT) specifically designed for high power and high current applications. As a type of transistor, an IGBT is a voltage-controlled device with a three-terminal gate structure. It is often referred to as a “gate-controlled thyristor”.

Application Field

The IXYH30N120C3 IGBT has been designed to meet the demands of high frequency EMI noise tolerant applications that require high power and current capacity. Its best applications are those in power converters, UPSs, motor drives, and motor control systems. Additionally, this IGBT is suitable for inverters, servers, welding tools and telecom systems.

Advantages

The IXYH30N120C3 IGBT offers various advantages. Firstly, it has very good insulation properties, making it ideal for different types of applications. Secondly, it has superior thermal performance and extremely low on-state resistance, making it highly capable of providing maximum efficiency even at high frequencies. Last but not least, the IGBT is totally immune to noise and has a near-zero voltage gate threshold, making it one of the most capable devices for high power applications.

Working Principle

The working principle of the IXYH30N120C3 IGBT is relatively simple. When the gate voltage is greater than the threshold voltage, it conducts and the current can flow. When the gate voltage is reduced below the threshold voltage, the conduction stops and the current ceases to flow.The IGBT has two distinct features that make it superior to a traditional MOSFET. Firstly, it has a lower gate-to-source threshold voltage, making it capable of switching the current on and off faster than the MOSFET. Secondly, it has a lower on-state resistance, making it more efficient at lower frequencies.

Conclusion

The IXYH30N120C3 IGBT is an ideal choice for various high power applications. It has superior insulation properties, very good thermal performance, and a very low on-state resistance. Additionally, it has a near-zero gate threshold voltage and is immune to noise. Finally, it has a fast switching speed compared to other transistors, making it the ideal device for various types of applications.

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