IXYH40N90C3D1 Allicdata Electronics
Allicdata Part #:

IXYH40N90C3D1-ND

Manufacturer Part#:

IXYH40N90C3D1

Price: $ 4.75
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 900V 90A 500W TO247
More Detail: IGBT 900V 90A 500W Through Hole TO-247 (IXYH)
DataSheet: IXYH40N90C3D1 datasheetIXYH40N90C3D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 4.31235
Stock 1000Can Ship Immediately
$ 4.75
Specifications
Power - Max: 500W
Supplier Device Package: TO-247 (IXYH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 100ns
Test Condition: 450V, 40A, 5 Ohm, 15V
Td (on/off) @ 25°C: 27ns/78ns
Gate Charge: 74nC
Input Type: Standard
Switching Energy: 1.9mJ (on), 1mJ (off)
Series: GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Current - Collector Pulsed (Icm): 180A
Current - Collector (Ic) (Max): 90A
Voltage - Collector Emitter Breakdown (Max): 900V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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An IGBT is one of the widely used transistors in the market today. It has several advantages such as high switching speed, high current and voltage ratings, low on-state losses, and low gate drive power. A single type IGBT is also known as IXYH40N90C3D1, an integrated gate bipolar transistor (IGBT) for high frequency power conversion applications. It is primarily used for high-frequency, high-efficiency applications such as solar inverters, motor drives, uninterruptible power supplies (UPS), and AC/DC converters.

The IXYH40N90C3D1 IGBT consists of a gallium nitride (GaN) substrate and an IGBT chip. The IGBT chip is made up of four parts, including the emitter, collector, base, and gate. The emitter and collector are formed on the surface of the substrate. The mean time to failure (MTTF) of this device is greater than 200,000 hours, making it highly reliable. The device is capable of handling collector currents up to 40A, making it suitable for high-power applications.

The IXYH40N90C3D1 IGBT is an enhancement-mode power transistor, which switches from an off-state to an on-state without the application of external bias. This makes the device highly suitable for digital applications. It also has a high collector-emitter breakdown voltage, up to 900 V, which allows it to withstand high electric fields.

The IXYH40N90C3D1 IGBT is mainly used in various applications, such as solar inverters, motor drives, UPS, and AC/DC converters. In solar inverters, it is used to convert DC electricity to AC electricity, which can then be used to power electric appliances. In motor drives, it is used to provide a better motion control by regulating the electric motor. In UPS, it is used to store energy and supply power in case of any power failures. In AC/DC converters, it is used to convert AC electricity to DC electricity, which can then be used to power low-voltage DC appliances.

In summary, the IXYH40N90C3D1 IGBT is one of the most commonly used transistors. It is an enhancement-mode power transistor that is capable of withstanding high electric fields due to its high collector-emitter breakdown voltage and is suitable for digital applications due to its no-bias switching feature. It is mainly used in solar inverters, motor drives, UPS, and AC/DC converters.

The specific data is subject to PDF, and the above content is for reference

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