IXYH50N120C3

Power - Max:	750W
Supplier Device Package:	TO-247 (IXYH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	600V, 50A, 5 Ohm, 15V
Td (on/off) @ 25°C:	28ns/133ns
Gate Charge:	142nC
Input Type:	Standard
Switching Energy:	3mJ (on), 1mJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	3.5V @ 15V, 50A
Current - Collector Pulsed (Icm):	240A
Current - Collector (Ic) (Max):	100A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

The IXYH50N120C3 is a field-stop IGBT (Insulated Gate Bipolar Transistor). It is one of the Insulated Gate Bipolar Transistor (IGBT) family of devices, designed and produced by Infineon Technologies AG, a German semiconductor manufacturer. It is designed to provide lower saturation voltage, higher efficiencies, and superior thermal management compared to traditional power transistors.

Applications

The IXYH50N120C3 can be used in a variety of applications, including radio frequency applications, DC-DC converters, and motor control applications. It is also suitable for use in high power dc-ac inverters, electrical vehicles, and renewable energy conversion applications.The IXYH50N120C3 by Infineon is especially beneficial in high-frequency operations such as rectifiers, switch-mode power supplies, motor control applications, and solar power applications. The robust thermal design allows it to handle higher power-switching frequencies and higher input voltages. It can also reduce the heat generated by power-switching operations and improve the reliability of the circuit.

Features

The IXYH50N120C3 is a single IGBT device, meaning it’s an integrated circuit composed of two transistors and two diodes. The device features a minimum breakdown voltage of 1200 V and a peak achievable output current of 50A. The device also features maximum on-state voltage conduction of 1.2V at a temperature of 25ºC. The device also has an impressive surge energy capability of 175J with a junction temperature of 25ºC.

Working Principle

The working principle of the IXYH50N120C3 is based on the principle of an Insulated Gate Bipolar Transistor. It is made up of two transistors and two diodes. The two transistors can be operated together or separately. When the IGBT is turned on, a voltage is applied to the gate of the device and it turns on, allowing the electrons to flow in the form of current. This current flows through the collector and emitter of the device, creating a flow of electric current. The two diodes act as a protection against reverse current.

Conclusion

The IXYH50N120C3 is an impressive device that offers superior thermal management, lower saturation voltages and higher efficiencies than traditional power transistors. It can be used in a variety of applications and operate at higher frequencies, making it suitable for a range of applications, from radio frequency applications and DC-DC converters to motor control and solar power applications. The working principle of the device is based on the principle of an Insulated Gate Bipolar Transistor and involves two transistors and two diodes. This device is a great choice for powering a range of different processes.

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