IXYH50N65C3H1

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The IXYH50N65C3H1 is a single Insulated-Gate Bipolar Transistor (IGBT) that is comprised of a high-speed NPT IGBT, optimized diode and very low inductance package. It’s on-state resistance is superior when compared with other IGBTs and it also features fast switching speed and guaranteed EMC performance.

Application Field

The IXYH50N65C3H1 is designed specifically for high power switching applications in power electronics. It can be used in battery chargers, motor and servo drives, medium voltage AC drives, HVAC, UPS and power supplies, solar power inverters, induction heating, motor control, as well welding and induction furnaces.

Working Principle

The IXYH50N65C3H1 has excellent current capacity and short circuit capability. It is an the N-channel IGBT, which means it utilizes an N-type channel for current conduction. An IGBT works by controlling the voltage applied to the gate of the device, which in turn controls the current that is allowed to flow through the junction. An n-channel IGBT can have up to three modes of operation: off, triode, and saturation. When the voltage applied to the gate of an n-channel IGBT is zero, it is said to be in the off mode – no current is allowed to flow through the junction. When the voltage applied to the gate is below the turn-on threshold voltage, the mode is said to be triode; in this mode current can begin to flow. In the saturation mode, the voltage applied to the gate is above the turn-on voltage and enables full current to flow through the IGBT junction.

In order to switch off an IGBT, the voltage applied to the gate is reversed, meaning that the voltage is switched from the positive to the negative. When this happens the voltage which allows current to flow is reversed, meaning that the current can no longer flow. This is then followed by a reverse recovery of the diode within the IXYH50N65C3H1; as the diode reverses, so does the current flow.

In summary, the IXYH50N65C3H1 is a single Insulated-Gate Bipolar Transistor that is designed to be used in a variety of high power switching applications. Its on-state resistance is superior when compared with other IGBTs and it also features fast switching speed and guaranteed EMC performance. Its working principle can be summarized by saying that it uses an N-type channel for current conduction, and the voltage applied to the gate of the device controls the current flow. When the voltage applied to the gate is reversed, the current can no longer flow and a reverse recovery of the diode occurs.

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