IXYH24N90C3D1

Power - Max:	200W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	340ns
Test Condition:	450V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C:	20ns/73ns
Gate Charge:	40nC
Input Type:	Standard
Switching Energy:	1.35mJ (on), 400µJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 24A
Current - Collector Pulsed (Icm):	105A
Current - Collector (Ic) (Max):	44A
Voltage - Collector Emitter Breakdown (Max):	900V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to IXYH24N90C3D1

The IXYH24N90C3D1 is a Transistors- IGMTs- Single type power semiconductor device. This device is categorized as a 900V N-channel IGBT designed for high-power and high-efficiency conversion applications. Generally, devices of this category are used for module-level applications such as photovoltaic inverters, frequency converters, renewable energy, industrial motor drive, and uninterruptible power supply.

Application Fields

The IXYH24N90C3D1 is suitable for a Wide variety of applications such as AC/DC (motor control), renewable energy systems, high-frequency UPS, smart grid, digital display lighting, and photovoltaic inverters. It is mainly used in motor control applications such as in electric vehicles, household appliances, and electromechanical drives. The IXYH24N90C3D1 can also be used in public lighting and low voltage electrical components such as switchgear due to its low loss characteristics.

Working Principle of IXYH24N90C3D1

The IXYH24N90C3D1 works as an insulated-gate bipolar transistor (IGBT). It is a special type of metal-oxide-semiconductor field-effect transistor (MOSFET) with bipolar characteristics, combining the advantages of both devices. The device is composed of a junction field-effect transistor (JFET), an insulated gate, and a bipolar junction transistor (BJT). This combination makes it possible to achieve high speed switching. The insulated gate uses a low voltage to control a high voltage power switch. When the gate voltage is low, the switch is in the off state and, when a certain voltage is applied, the switch is on. Compared to traditional bipolar junction transistors (BJTs), IGBTs have higher efficiency due to their faster switching speed, lower static drain-source on-resistance, and lower junction-to-emitter voltage. Since they have an insulated gate, they have low gate charge. This leads to lower conduction losses. Furthermore, IGBTs have very low switching losses compared to BJTs due to the absence of reverse recovery current.

Conclusion

To conclude, the IXYH24N90C3D1 is a 900V N-channel IGBT designed for high-power and high-efficiency conversion applications. It works as an insulated-gate bipolar transistor (IGBT) and combines the advantages of both a junction field-effect transistor (JFET) and a bipolar junction transistor (BJT). This device is suitable for a wide variety of applications such as photovoltaic inverters, frequency converters, and renewable energy. Due to its low-loss characteristics and fast switching speed, the IXYH24N90C3D1 provides great efficiency and low power consumption, making it an ideal choice for motor control and electrical applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description