IXYH8N250C Allicdata Electronics
Allicdata Part #:

IXYH8N250C-ND

Manufacturer Part#:

IXYH8N250C

Price: $ 8.79
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 2500V 29A TO247AD
More Detail: IGBT 2500V 29A 280W Through Hole TO-247AD
DataSheet: IXYH8N250C datasheetIXYH8N250C Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 7.99134
Stock 1000Can Ship Immediately
$ 8.79
Specifications
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 5ns
Test Condition: 1250V, 8A, 15 Ohm, 15V
Td (on/off) @ 25°C: 11ns/180ns
Gate Charge: 45nC
Input Type: Standard
Series: XPT™
Power - Max: 280W
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Current - Collector Pulsed (Icm): 70A
Current - Collector (Ic) (Max): 29A
Voltage - Collector Emitter Breakdown (Max): 2500V
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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The IXYH8N250C is a discrete IGBT (Insulated Gate Bipolar Transistor) device designed for the electronic market. It is a single, normally-on device, meaning it is usually on when power is applied and does not need to be switched on. The IXYH8N250C is capable of continuous operation at a collector current of 83A and a collector-emitter voltage of 650V, making it suitable for applications such as solar inverters, electronic motor control, and smart grids. It also features temperature sensing, over-current protection, and electromagnetic noise suppression. The IXYH8N250C IGBTs are also capable of several types of operation including linear and PWM (Pulse Width Modulation).

The IXYH8N250C is composed of several components including an emitter, collector, and gate lead. The emitter and collector leads transport electric current and the gate lead is used to regulate the amount of current flow. When the gate lead is left open and no voltage is applied, no current is allowed to pass through and the device remains off. When a voltage is applied to the gate lead, current is allowed to flow, thus turning the device on. The level of voltage applied to the gate controls the amount of current flowing through the device. This enables the IXYH8N250C to be used in applications where precise current regulation is required.

The IXYH8N250C is designed with a number of protective features including temperature sensing and over-current protection. Temperature sensing allows the device to autonomously reduce current levels when it reaches a certain temperature, thereby reducing the chance of thermal runaway and failure. Over-current protection is triggered in the event of an excessive amount of current and will cause the device to shut down. This helps protect both the IXYH8N250C and whatever it is connected to from damage.

The IXYH8N250C is also designed for low noise operation. This is achieved through noise suppression circuitry, which filters out electromagnetic noise that may be generated during operation. This ensures that the IXYH8N250C does not interfere with other electronic devices in its vicinity and that the signal it sends is clear and reliable.

In conclusion, the IXYH8N250C is a single, normally-on IGBT device that is suitable for applications such as solar inverters, electronic motor control, and smart grids. It is capable of continuous operation at a collector current of 83A and a collector-emitter voltage of 650V. It is also equipped with several protective features including temperature sensing and over-current protection, as well as noise suppression to ensure low-noise operation. The IXYH8N250C can be used in applications where precise current regulation is required and is able to operate in a linear or PWM fashion.

The specific data is subject to PDF, and the above content is for reference

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