IXYH16N250C

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IXYS Integrated Circuits Division\'s latest generation IGBT, the IXYH16N250C, is firmly established in the market. It builds on their power dissipation topologies and their next-generation chip designs, creating a revolutionary new technology that can help engineers reduce power loss, increase power efficiency and longevity, and design more innovative and efficient systems. This IGBT has a wide range of applications and can be used in a range of designs. Let\'s look at the application field and working principle of the IXYH16N250C.

Application field of IXYH16N250C

The IXYH16N250C is most suitable for use in high frequency, high current and high power density applications such as motor drives and lighting dimmers. It is also suitable for fast-switching inverter applications such as those used in high-efficiency solar systems, power supplies, and power converters. Further applications include high side switches, inverters, UNIs, and PFCs.

This IGBT can also be used in a variety of ad-hoc measures, from current- or voltage-limited circuits to overcurrent protection. This includes thermal and voltage protection for HVAC, transformers, and other motor drives. The IXYH16N250C is also capable of reducing switching and snubbing losses for motor drive converters, solar inverters and AC drives, allowing for more efficient operations.

Working principle of IXYH16N250C

The IXYH16N250C is an IGBT-based design with a focus on fast-switching and energy-efficient operations. It features a complementary structure with an integrated N-type and P-type MX2 IGBT in the same package. This chip is manufactured with a proprietary low-resistance “GO-diode” structure. The IGBT utilizes power dissipation topologies aimed at reducing energy loss in a very low conduction loss design.

The IGBT structure of the IXYH16N250C uses a two-level structure of the two integrated IGBTs. This multi-level structure enables a lower on-state resistance and power loss, as well as a low reverse recovery time. It also improves noise reduction by reducing switching losses, leading to ultra-low power loss.

The chip also features a super junction gate injection technology (SGIT), allowing for high speed switching and low turn-on loss. Moreover, the chip structure is extremely resistant to latch up current, allowing for enhanced safety in use. Finally, the IXYH16N250C includes an EMI-free boot-strap type floating gate injection, ensuring a clean signal and low electromagnetic interference.

Conclusion

The IXYH16N250C is a high-performance, energy-efficient IGBT chip with a wide range of applications. It features a two-level structure and advanced power dissipation topologies, reducing energy loss and improving noise reduction. Its integrated GO-diode structure also reduces on-state resistance and power loss, while its SGIT technology ensures high speed switching and low turn-on loss. These features make it an ideal choice for applications in motor drives, lighting dimmers, fast-switching inverters, HVAC, transformers, and other motor drives.

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