IXYH100N65C3

The IXYH100N65C3 is a single insulated gate bipolar transistor (IGBT) comprised of two components, an N-channel MOSFET and a P-channel MOSFET. This combination device allows for a lower switching frequency, providing better power efficiency and faster switching speeds than other types of transistors used in the same application. The IXYH100N65C3 is part of the IXYH-series of IGBTs and is intended for high power and high frequency applications.

The IXYH100N65C3 can be found in many industrial applications. Some of the applications that commonly use this device include AC and DC motor control, variable speed drives, 3-phase inverters, UPS systems, solar and wind energy applications, and digital circuits. This device is well-suited for high-frequency switching and power semiconductor applications. It can be used with both IGBT and SiC based power modules and is an economical choice for medium and low power applications. It is capable of operating at temperatures between -40°C and 85°C.

The IXYH100N65C3 works on the principle of a single-phase half-bridge. It is comprised of several components. The collector emitter structure is comprised of two n-channel MOSFET transistors coupled in parallel, while the gate-drain structure is composed of two p-channel MOSFET transistors coupled in parallel. When a voltage is applied to the gate of one of the transistors, it allows current to flow from the collector to the emitter. The current is then passed through the opposite transistor, allowing it to turn on. This process creates a switch capable of controlling the device’s output current.

The IXYH100N65C3 has a relatively low voltage gate source breakdown voltage, allowing for higher gate source currents and lower device losses. Additionally, the device also features an integrated gate driver that reduces device losses and capacitance, resulting in higher switching speeds and improved efficiency. The IXYH100N65C3 has a maximum current rating of 100A and is capable of operating at frequencies of up to 1MHz.

The IXYH100N65C3 is an ideal choice for switching applications due to its low gate source breakdown voltage, high performance, and low switching losses. By using the IXYH100N65C with its integrated gate driver, designers can achieve improved system efficiency, faster switching speeds, and increased power density. In addition, power delivery can be tailored quickly and easily with this device over a wide range of frequencies, allowing for a wide range of applications in industrial, automotive, and energy industries.