IXYH30N65C3

Power - Max:	270W
Supplier Device Package:	TO-247 (IXYH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C:	21ns/75ns
Gate Charge:	44nC
Input Type:	Standard
Switching Energy:	1mJ (on), 270µJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 30A
Current - Collector Pulsed (Icm):	118A
Current - Collector (Ic) (Max):	60A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction
The IXYH30N65C3 is a single insulated-gate bipolar transistor (IGBT) with a hybrid gate topology. The device is CMOS compatible and has an excellent switching performance, making it ideal for power management applications. The device is a component of the IXYH series, which is designed and manufactured by IXYS in order to increase the performance, reliability and flexibility of power management components. The primary features of the IXYH series include a low on-state resistance, fast switching times, high reliability, and excellent thermal properties.
Application Field
The IXYH30N65C3 is primarily used in applications where high-current power conversion is required. It is suitable for applications such as motor control, power conditioning, and power supply design in industrial automation and lighting. The device’s high-efficiency performance reduces power losses and increases the overall performance of the system. The transistor also offers excellent reliability and low switching losses, making it a suitable choice for applications that require reliable current-switching performance. Additionally, the IXYH30N65C3 can be used in automotive applications, such as the power supply design of electronic components in vehicles.
Working Principle
The IXYH30N65C3 is an N-channel IGBT with a hybrid-gate structure. It is a three-terminal device that includes a gate, collector, and emitter. The device operates when the base-emitter voltage, VCE, is applied to the gate of the transistor. This results in creating a mobile charge carrier in the base region, which raises the potential barrier between the collector and the emitter. This allows current to flow from the collector to the emitter of the device. The collector-emitter voltage (VCE) is used to control the current gain of the device. When the VCE is increased, the current gain, or process gain, also increases, allowing more current to flow between the collector and the emitter. The maximum collector current of the IXYH30N65C3 is 30A and the collector-emitter reverse voltage is 65V.
Advantages
The IXYH30N65C3 is an excellent choice for use in power management applications due to its low on-state resistance, fast switching speeds, and robust thermal properties. The device offers excellent current and voltage capabilities, alongside its high process gain, making it a reliable choice for applications that require high-performance and reliability. Additionally, the device features CMOS compatibility, which provides excellent switching performance and ensures compatibility between the normal and high-end applications.
Conclusion
The IXYH30N65C3 is a single-channel IGBT transistor with an excellent switching performance. It is suitable for use in a variety of power management applications, such as motor control and power supply design, as well as automotive applications. The device offers excellent current and voltage capabilities, as well as a low on-state resistance, fast switching speeds and a high process gain. Additionally, the device is CMOS compatible, making it suitable for normal and high-end applications.

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