IXYH50N65C3D1 Allicdata Electronics
Allicdata Part #:

IXYH50N65C3D1-ND

Manufacturer Part#:

IXYH50N65C3D1

Price: $ 4.38
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT
More Detail: IGBT 650V 132A 600W Through Hole TO-247
DataSheet: IXYH50N65C3D1 datasheetIXYH50N65C3D1 Datasheet/PDF
Quantity: 1000
30 +: $ 3.97320
Stock 1000Can Ship Immediately
$ 4.38
Specifications
Input Type: Standard
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 36ns
Test Condition: 400V, 36A, 5 Ohm, 15V
Td (on/off) @ 25°C: 20ns/90ns
Gate Charge: 86nC
Series: XPT™, GenX3™
Switching Energy: 800µJ (on), 800µJ (off)
Power - Max: 600W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Current - Collector Pulsed (Icm): 250A
Current - Collector (Ic) (Max): 132A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Part Status: Active
Description

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The IXYH50N65C3D1 is a high-power IGBT that can be used in several applications, including telecoms and consumer products. It has an isolated base that can support high voltage operation, high current operation, and high thermal dissipation. The device is a single IGBT, meaning that it can be used alone or connected in series or parallel with other IGBTs to increase the output current or voltage capability. This feature makes it attractive for various power conversion applications, such as motor drives, AC generators, power supplies, and servo motors.

The IXYH50N65C3D1 is designed using the latest 650V IGBT technology, which reduces its thermal resistance, increases its efficiency and improves its reliability. Compared to other IGBTs, the IXYH50N65C3D1 has higher current and voltage ratings, which makes it an ideal choice for applications needing high current or voltage. It can support up to 70A peak current, with a voltage rating of 650V.

The IXYH50N65C3D1 is based on a conventional IGBT structure, with a base-emitter arrangement. The device\'s base is connected to the IGBT\'s gallium arsenide (GaAs) substrate and the collector is connected to the ohmic contact. The collector\'s ohmic contact is connected to the gate and a voltage is applied to the gate to control the IGBT\'s output current. The base-emitter arrangement results in a higher current driving ability and a higher current gain, which makes it ideal for high-power applications.

The IXYH50N65C3D1 has a built-in protection circuit that prevents it from being damaged due to over-current and over-voltage. It also has an internal thermal shutdown circuit that prevents the IGBT from being damaged due to excessive temperatures. The device is also resistant to changes in temperature, humidity, and vibration, making it suitable for use in harsh environments.

The IXYH50N65C3D1 is well-suited for use in many power conversion applications. It can be used to regulate the DC power supply, controlling the current, voltage, and frequency. It can also be used to regulate the output of AC power supplies. Additionally, it can be used to control the speed and direction of servo motors in precision motion control systems.

The IXYH50N65C3D1 is a highly efficient, reliable and versatile device. Its high current and voltage ratings make it ideal for various power conversion applications. Its built-in protection circuits and internal thermal shutdown system provide excellent reliability and safety. Its resistance to temperature, humidity, and vibration make it suitable for use in harsh environments. Overall, it is an ideal device for many power conversion and control applications.

The specific data is subject to PDF, and the above content is for reference

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