JAN2N3421S Allicdata Electronics
Allicdata Part #:

1086-20810-ND

Manufacturer Part#:

JAN2N3421S

Price: $ 15.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 80V 3A TO39
More Detail: Bipolar (BJT) Transistor NPN 80V 3A 1W Through Ho...
DataSheet: JAN2N3421S datasheetJAN2N3421S Datasheet/PDF
Quantity: 1000
100 +: $ 13.65640
Stock 1000Can Ship Immediately
$ 15.03
Specifications
Series: Military, MIL-PRF-19500/393
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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A transistor is an electronic device used to control the flow of electricity in an electronic circuit. The JAN2N3421S is a type of bipolar junction transistor (BJT) which is a two-terminal semiconductor device that conducts current between the two terminals when the base-collector voltage (V BE ) is more than the base-emitter voltage (V BX ).

The JAN2N3421S is a single transistor which has three layers of semiconductor material and three terminals. The three terminals are the base (B), the collector (C) and the emitter (E). The base terminal is used to control the current flow between the collector and emitter. When a small current is supplied through the base terminal, a larger current flows between the collector and emitter terminals. This larger current is known as the collector current (I C ). The amount of current that flows through the collector-emitter junction is determined by the transistor\'s current gain which is given by the ratio of collector current to the base current (I C / I B ).

The JAN2N3421S is a general-purpose transistor that can be used in a wide range of applications such as switching, amplifying, line driving and motor control. Some of the features of this transistor which make it suitable for these applications include low leakage current, low voltage noise and low collector-emitter saturation voltage. It is also able to operate at high frequencies and is able to handle large amounts of current.

The working principle of the JAN2N3421S can be explained in terms of the base current and collector-emitter current. When the base current is applied to the base terminal, it creates an electric field which allows the flow of electrons through the base region of the transistor. This movement of electrons creates a collector current which is proportional to the base current. The collector current flows through the collector-emitter junction which generates a voltage across the collector and emitter terminals.

The JAN2N3421S is a versatile and reliable transistor that can be used in a wide range of applications. Its ability to handle high currents, operate at high frequencies and provide low saturation voltage make it a popular choice for many applications. It is an ideal choice for designers looking for a reliable and efficient transistor for their projects.

The specific data is subject to PDF, and the above content is for reference

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