| Allicdata Part #: | 1086-2321-ND |
| Manufacturer Part#: |
JAN2N2219A |
| Price: | $ 8.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 50V 0.8A |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 800mW Thro... |
| DataSheet: | JAN2N2219A Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 7.63623 |
| Series: | Military, MIL-PRF-19500/251 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 800mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
| Power - Max: | 800mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -55°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package: | TO-39 |
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The JAN2N2219A is a bipolar junction transistor, usually referred to as a BJT. It is a single n-channel transistor which has a frequency-independent input capacitance and is used in many applications. The device has a variety of uses in telecommunications, consumer electronics, and other applications.
A bipolar junction transistor has a three-layer structure composed of an emitter, collector, and base. It consists of two p-n junctions which are connected in series. When a current is applied to the base-emitter junction, a voltage is created at the base-collector junction. This voltage is known as the collector-emitter voltage and allows the current to flow through the collector.
The JAN2N2219A is a low-noise NPN transistor specifically designed for use in audio circuits. It has a low noise characteristic, making it ideal for use in audio amplifiers. It is also designed for operation in high-frequency circuits, where it can handle frequencies up to 1GHz. The device also has an integrated ESD protection circuit, making it suitable for use in high-voltage applications. In addition to its application in audio circuits, the device can also be used in high-speed power switching applications such as inverter circuits.
The device has a low-saturation voltage of 540mV and a maximum collector-base breakdown voltage of 900V. Its maximum power dissipation is 500mW. The device’s hFE is typically between 80 and 100, allowing for a high gain in small signal applications. The device’s maximum collector current is 1.6A and its operating temperature range is -55°C to 125°C.
In addition to its low-noise characteristics, the device is designed to be robust and has a high breakdown voltage. This makes it suitable for industrial and automotive applications, where it can be used in systems such as motor control, lighting, and power inverters. The device is also designed to be radiation-tolerant, meaning it can be used in space-based and military applications.
The JAN2N2219A is a versatile device which has a variety of applications. In addition to its use in audio circuits, it can also be used in high-frequency switching applications, in motor control systems and in space-based and military applications. Its low-noise characteristics, high breakdown voltage, and radiation tolerance make it a versatile device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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JAN2N2219A Datasheet/PDF