| Allicdata Part #: | 1086-16076-ND |
| Manufacturer Part#: |
JAN2N1489 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 40V 6A |
| More Detail: | Bipolar (BJT) Transistor NPN 40V 6A 75W Through H... |
| DataSheet: | JAN2N1489 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | Military, MIL-PRF-19500/208 |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 6A |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 300mA, 1.5A |
| Current - Collector Cutoff (Max): | 25µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 1.5A, 4V |
| Power - Max: | 75W |
| Frequency - Transition: | -- |
| Operating Temperature: | 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-204AA, TO-3 |
| Supplier Device Package: | TO-33 (TO-204AA) |
Description
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What is JAN2N1489?
JAN2N1489 is a single bipolar junction transistor (BJT) used in amplifying, switching, and many other applications. Manufactured by both On Semiconductor and Bourns, JAN2N1489 is typically used in switched-mode power supplies, voltage regulation designs, and other low-noise amplifier designs.Features of JAN2N1489
The JAN2N1489 can be found in several different packages, such as TO-92, TO-263, and TO-3. The package influences both its size and thermal characteristics. It also has the following features:- High gain of 80-150 at 4 Mbps.
- Low-noise.
- Operates at a maximum current of 100 mA.
- Designed for low-breakdown voltage.
- Designed to operate in temperatures ranging from -65 to +150°C.
Application Field and Working Principle of JAN2N1489
The JAN2N1489 is a versatile single bipoloar transistor capable of performing a wide range of tasks. Primarily, the JAN2N1489 is used amplifying, switching, and other applications that may require low noise or require precision control. One of the main application fields for the JAN2N1489 is in power supplies, allowing for improved efficiency and increased reliability.The principle of operation of the JAN2N1489 is based upon its bipolar transistor structure. The device contains three regions, the collector, base, and emitter. The current flowing through the collector-base junction is controlled by the current flowing through the base-emitter junction. This is referred to as current gain, and is essential for amplifying and switching applications.The JAN2N1489 is a highly reliable single bipolar transistor with a wide temperature range, making it an ideal choice for many different applications. Its low noise and high gain properties make it a great choice for low-noise amplifier designs, and its structure makes it ideal for power supply applications.The specific data is subject to PDF, and the above content is for reference
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JAN2N1489 Datasheet/PDF