| Allicdata Part #: | 1086-2355-ND |
| Manufacturer Part#: |
JAN2N3737 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 40V 1.5A TO46 |
| More Detail: | Bipolar (BJT) Transistor NPN 40V 1.5A 500mW Throu... |
| DataSheet: | JAN2N3737 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | Military, MIL-PRF-19500/395 |
| Packaging: | Bulk |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1.5A |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Vce Saturation (Max) @ Ib, Ic: | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 1.5V |
| Power - Max: | 500mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-206AB, TO-46-3 Metal Can |
| Supplier Device Package: | TO-46-3 |
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A bipolar junction transistor, or BJT, is a three-terminal semiconductor device. It is made of two p-n junctions which are formed between a semiconductor material (silicon or germanium) and a housing material (usually metal). The two p-n junctions are connected to each other by a chain of three semiconductor layers. This chain of three layers forms the basis of the BJT\'s ability to amplify electrical signals and is referred to as a "base-collector junction." A BJT can be used in a range of applications including amplifiers, switches, and oscillators.
The JAN2N3737 is an NPN-type BJT, meaning it has two p-n junctions: an N-type and a P-type. The N-type p-n junction is between the base and collector regions, and the P-type junction is between the base and emitter regions. It is a small signal device, usually used in low impedance circuits where low gain is required, such as amplifiers, oscillators, and switching.
The JAN2N3737 works by controlling the current flow between its two terminals, the base and the collector. It does this by using the principle of electron flow. In an NPN transistor, the current flows from the base to the collector when the base is "low" or below a certain voltage threshold. As the voltage of the base increases, the current flowing from the base to the collector decreases.
When a voltage or current is applied to the base, the transistor acts as a current amplifier. At low voltages, the current flowing between the base and collector is low, and the overall current gain of the device is low. But as the base voltage is increased, the current flowing from the base to the collector increases dramatically, resulting in a high current gain.
The JAN2N3737 can be used in a range of applications, including amplifier, switch, and oscillator circuits. For example, it can be used as an amplifier to increase the power of an incoming signal. It can also be used as a switch, in which case it will be used to open and close a circuit in order to turn an electrical device on and off. In addition, the JAN2N3737 can be used in oscillator circuits, where it can be used to generate and maintain a repetitive electrical signal.
In conclusion, the JAN2N3737 is a single-base bipolar junction transistor (BJT) which is typically used in low impedance circuits. It works by controlling the current flow between its two terminals, the base and the collector. It can be used in a range of applications, including amplifiers, switches, and oscillators.
The specific data is subject to PDF, and the above content is for reference
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JAN2N3737 Datasheet/PDF