JAN2N6211

Series:	Military, MIL-PRF-19500/461
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	225V
Vce Saturation (Max) @ Ib, Ic:	1.4V @ 125mA, 1A
Current - Collector Cutoff (Max):	5mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 1A, 5V
Power - Max:	3W
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-213AA, TO-66-2
Supplier Device Package:	TO-66 (TO-213AA)

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The JAN2N6211 is a high-quality, bipolar, low-noise, long-wavelength, single-junction, NPN transistor that features very low base resistance. Although it is classified as a Single Bipolar Junction Transistor (BJT), the JAN2N6211 actually has a lot in common with a Hybrid Transistor, i.e., a combination of BJT and Field Effect Transistor (FET). The JAN2N6211 has a breakdown voltage of 45V and is capable of efficiently cycling up to 2A of current. Its maximum power dissipation is rated at 4.5 W.JAN2N6211\'s application field is primarily in radar systems. It is also used as an amplifier and gain control circuit in various other industrial, automotive and aerospace applications. The JAN2N6211 offers a wide frequency range, low noise characteristic and stability over a wide temperature range. The high gain of the device also enables it to be used in video amplifier, gain control and automatic gain control circuits.The working principle of the JAN2N6211 transistor is based on the fact that it is composed of two semiconductor junctions, an N-type and a P-type semiconductor material. Each junction has its own electrical properties, allowing the current to flow in one direction when a voltage is applied, and in the other direction when the voltage is reversed. When a current passes through the N-type side of the device, the current is amplified by the P-type side. During amplification, the number of electrons connected to the base of the device decreases, which causes the resulting current to become smaller. As a result, this type of transistor is considered to be an NPN transistor.When a voltage is applied to the base of the device, and a current travels through it, the electrons of the N-type side of the device are repelled by the voltage, allowing the current to travel through the P-type side of the device. The base-emitter diode that is formed between the two semiconductor junctions acts as a switch, controlling the electron flow. As a result, the current that passes through the device is amplified.In summary, the JAN2N6211 is a single Junction NPN transistors that offers excellent performance in terms of its breakdown voltage, current gain, and frequency range. The device can handle up to 2A of current over a wide temperature range, and its high gain enables it to be used in a variety of industrial, automotive, and aerospace applications. Additionally, its low base resistance means that it will be able to provide efficient operation even when used in radar systems. Finally, the device is based on the principle that two semiconductor layers will allow current to flow in one direction when a voltage is applied, and the base-emitter diode allows the current to be amplified.

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