Allicdata Part #: | 1086-2352-ND |
Manufacturer Part#: |
JAN2N3700UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 80V 1A |
More Detail: | Bipolar (BJT) Transistor NPN 80V 1A 500mW Surface... |
DataSheet: | JAN2N3700UB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/391 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 500mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | 3-UB (2.9x2.2) |
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The JAN2N3700UB is a small signal NPN transistor used in a variety of amplifier applications. It is a bipolar junction transistor (BJT) with a single emitter/collector structure. The device is typically used in amplifier circuits as a current amplifier, current switch, load line driver, and other low-power applications requiring gain.
The device is composed of two P-type and one N-type layers of materials arranged in a sandwich-style configuration. The N-type layer lies between the two P-type layers and forms the junction between them. When a small current flows through the base to the emitter, it causes a larger current to flow from the collector to the emitter. This larger current is the amplified current, which can be used for various amplifier applications.
The performance characteristics of the JAN2N3700UB vary depending on the application. In amplifier applications, the JAN2N3700UB provides gain by converting a small input current into a larger output current. The gain can be modified by adjusting the base current and collector voltage. In current switching applications, the JAN2N3700UB can be used as a switch that is activated by a small base current, allowing a larger current to flow when the switch is on. The device can be used as a load line driver to provide a level of current that is independent of load current variations.
The JAN2N3700UB is designed to be robust and reliable in a variety of applications. The device is manufactured using a Base Emitter Saturation Voltage (BESV) process, which results in a low VCEsat for higher voltage gains. The device has a low noise profile, allowing for improved signal-to-noise ratios. The JAN2N3700UB also has a high operating temperature range, allowing for use in temperature-sensitive applications.
The device is also designed to have a low input bias current, preventing large changes in the base current when the input voltage changes. This also helps to ensure that the amplified current remains stable, even with input voltage variations. The low input capacitance of the device allows it to be used in high-frequency applications, as it minimises losses due to capacitive reactance.
The JAN2N3700UB is a versatile device that is suitable for a variety of low-power amplifier and switching applications. The device has low VCEsat, fast gain bandwidth, and low noise and input capacitance, making it suitable for many applications. The device is also robust and reliable and can operate over a wide temperature range, making it suitable for use in temperature-sensitive applications.
The specific data is subject to PDF, and the above content is for reference
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