JAN2N5038 Allicdata Electronics
Allicdata Part #:

1086-16138-ND

Manufacturer Part#:

JAN2N5038

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 90V 20A TO-3
More Detail: Bipolar (BJT) Transistor NPN 90V 20A 140W Through...
DataSheet: JAN2N5038 datasheetJAN2N5038 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/439
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 90V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 12A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V
Power - Max: 140W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3 (TO-204AA)
Description

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The JAN2N5038 is a NPN silicon junction transistor designed for used in a variety of applications such as switching, amplification and signal processing circuits. It has a low current design that is suitable for use in both low and high impedance applications. The device has a maximum current rating of 3 A and a maximum voltage rating of 12 V.

The JAN2N5038 is a three layer transistor, consisting of an emitter, base and collector. It has a miniature size, making it ideal for applications where space is at a premium. It also has an integrated current gain of 375 and a low capacitance of just 27 pF.

The JAN2N5038 transistor is an excellent choice for applications where cost and performance are critical. It is capable of switching large currents with high speed and operates at higher frequencies than other transistors. It can also be used in high-speed data processing applications and audio frequency switching.

The JAN2N5038 transistor operates using the concept of minority carrier injection. This process involves injecting a small number of electrons from a low-level of potential into the base of the transistor. This causes an increase in the number of holes in the base, allowing more electrons to be swept from the emitter to the collector. This process is amplified by the transistor’s current gain resulting in the larger current flow from collector to emitter.

In addition to its excellent performance, the JAN2N5038 transistor offers a wide range of features such as low noise and high saturation current capabilities. Its low saturation current makes it well suited for use in low-power applications while its low noise capability offers excellent signal integrity. The JAN2N5038 also has a low reverse breakdown voltage rating, making it ideal for inverter applications.

The JAN2N5038 transistor is a reliable and versatile device, capable of performing in a wide variety of applications. With its excellent performance and features, it is a great choice for designers looking for a cost-effective solution for their switching and signal processing needs.

The specific data is subject to PDF, and the above content is for reference

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