JAN2N4237 Allicdata Electronics
Allicdata Part #:

1086-20969-ND

Manufacturer Part#:

JAN2N4237

Price: $ 34.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 40V 1A TO39
More Detail: Bipolar (BJT) Transistor NPN 40V 1A 1W Through Ho...
DataSheet: JAN2N4237 datasheetJAN2N4237 Datasheet/PDF
Quantity: 1000
100 +: $ 31.26590
Stock 1000Can Ship Immediately
$ 34.39
Specifications
Series: Military, MIL-PRF-19500/581
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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The JAN2N4237 is a bipolar junction transistor (BJT) used in a variety of applications. It is a single, NPN silicon planar transistor with an emitter area of 3.2 mm2. The JAN2N4237 is designed for rugged operation over a wide range of collector currents. It has a high current gain of 2000 which is typical for modern BJTs.

The JAN2N4237 is typically used in amplifiers, audio receivers, power oscillators, and motor control circuits. It is also used in switching circuits for speed control, gate control, and other applications where high switching speeds are required.

The JAN2N4237 is constructed using silicon planar epitaxial construction. This design ensures excellent current gain and uniformity over a wide temperature range. It also provides excellent mechanically ruggedness and reliable performance.

The base of the JAN2N4237 is connected to the collector and the emitter is connected to the source. This arrangement allows the base current to control the current flowing through the device, with the emitter connected to the source to act as a current source.

When a voltage is applied to the base of the JAN2N4237, the current begins to flow from the emitter to the collector. As the current increases, the voltage drop across the base-collector junction increases. This increase in voltage drop causes the current to decrease, which in turn reduces the voltage drop. This process continues as long as the voltage applied to the base is greater than the voltage drop across the base-collector junction.

When the applied voltage to the base is reduced, the current between the collector and the emitter decreases and the voltage drop across the junction decreases. This process is known as the saturation region. In this region, the voltage drop across the junction remains constant and the current flow can only be reduced by reducing the supply voltage.

The JAN2N4237 can operate at collector currents ranging from 2mA to 500mA. It also has a high Cg and is capable of providing high frequency switching. The JAN2N4237 is a rugged and reliable device that is suitable for many design applications.

The specific data is subject to PDF, and the above content is for reference

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