| Allicdata Part #: | 1086-20773-ND |
| Manufacturer Part#: |
JAN2N2920L |
| Price: | $ 26.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS 2NPN 60V 0.03A TO78 |
| More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30... |
| DataSheet: |  JAN2N2920L Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 24.07150 |
Specifications
| Series: | Military, MIL-PRF-19500/355 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | 2 NPN (Dual) |
| Current - Collector (Ic) (Max): | 30mA |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 1mA, 5V |
| Power - Max: | 350mW |
| Frequency - Transition: | -- |
| Operating Temperature: | 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-78-6 Metal Can |
| Supplier Device Package: | TO-78-6 |
Description
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The JAN2N2920L is a type of bipolar junction transistor (BJT) array that is widely used in many applications. It is a form of transistors that consists of two or more semiconductor devices joined together in a common circuit. Bipolar junction transistors are widely used because of their ability to be used as amplifiers and also as digital logic circuits. The JAN2N2920L is a three-terminal monolithic digitlal integrated circuit. It provides direct connection, through a common circuit structure, between three terminals, which are a base, an emitter, and a collector. It has a linear amplification factor of 10, which is the ratio of the collector current to the base current. It also has a power rating at 3V, a maximum power dissipation of 1.5W, and a maximum operating temperature of 150°C. The JAN2N2920L has a wide range of applications. It is commonly used in circuits such as amplifiers and oscillators. It is also used in digital logic applications such as memory and processing circuits, as the gain of the transistor array allows for faster switching speeds. The working principle of the JAN2N2920L is based on the principle of bipolar junction transistors. It is a type of transistor that consists of two semiconductor junctions. The base-emitter junction is forward biased, while the base-collector junction is reverse biased. When a voltage is applied to the base terminal, it causes a current to flow through the base-emitter junction. This current is then amplified through the base-collector junction and the resulting current is output through the collector terminal. The JAN2N2920L is a highly efficient and reliable BJT array. Its wide range of applications makes it a popular choice for many different circuits. Its linear amplification factor of 10 makes it suitable for applications requiring a greater amount of gain. Its power rating of 3V and maximum power dissipation of 1.5W make it suitable for high-power applications, while its maximum operating temperature of 150°C make it suitable for applications requiring a high level of reliability. In conclusion, the JAN2N2920L is a type of bipolar junction transistor array that is widely used in many applications. It has a wide range of applications, including amplifiers, oscillators, memory, and processing circuits. The working principle of the JAN2N2920L is based on the principle of bipolar junction transistors and its linear amplification factor of 10 makes it suitable for applications requiring a greater amount of gain.
The specific data is subject to PDF, and the above content is for reference
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