Allicdata Part #: | 1086-20791-ND |
Manufacturer Part#: |
JAN2N3418 |
Price: | $ 15.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 60V 3A |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 1W Through Ho... |
DataSheet: | JAN2N3418 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 14.14860 |
Series: | Military, MIL-PRF-19500/393 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 5µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 2V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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The JAN2N3418 is a NPN transistor with a maximum collector power dissipation of 500 mW, and a voltage rating of 25 V. This transistor is categorized as part of the single bipolar junction transistor (BJT) family. Its applications vary and depend on its characteristics and properties, while its working principle revolves around the physical principle of electron flow.
Physical Characteristics
The JAN2N3418 is built with a NPN chip design. It is designed to operate with a collector-emitter (CE) voltage of 25V and a collector-base (CB) voltage of 100V. It comes with a maximum emitter-base (EB) voltage rating of 5V and a maximum collector current of 600mA. This transistor features an excellent thermal resistance, with a junction-to-case rating of 800C per watt.
The device\'s junction-to-ambient rating is 250C per watt, which means that it can withstand a temperature range of -65C to +225C with little risk of damage. The gate features a switching time of 300ns for turn-on and 600ns for turn-off. This makes the device suitable for rapid switching applications, such as high-frequency radio circuits.
Electrical Characteristics
At its standard operating conditions, the JAN2N3418 is designed to have a maximum collector-emitter voltage of 25V, an emitter-base cutoff current of 400nA, and a collector-base cutoff current of 500nA. The collector-emitter breakdown voltage is 40V, while the maximum collector-emitter saturation voltage is 0.8V. The maximum DC current gain is 150, while the total hFE current gain at temperatures up to 150C is 90.
The device\'s current-gain bandwidth is 13MHz, while its input capacitance is 180pF. Its output capacitance is 25pF, and its frequency response includes gain bandwidth product of 16MHz. The reverse-bias leakage current is 4mA, and the maximum current rating for solder dipping is 200mA for 10 seconds.
Application Field
The JAN2N3418 can be used in different electronic applications. It can be used as a high-frequency amplifier, as its maximum gain bandwidth is 13MHz and its current gain bandwidth is 90. It can also be used as a low-noise amplifier or as an oscillator, especially in high-frequency radio circuits. The transistor can be used as a current source, thanks to its good thermal resistance and wide operating temperature range.
The JAN2N3418 is suitable for switching applications, such as in logic circuits and relays, owing to its good switching speed and high current and voltage ratings. The transistor can also be used for dealing with transient current spikes, thanks to its robust build and wide voltage and current ratings. It can also be used in audio amplifiers and other power amplifier applications.
Working Principle
The working principle of the JAN2N3418 rests on the physical principle of electron flow. This principle states that a small movement of electrons from one region to another can induce a large current in an electronic circuit. The transistor is designed with three main junctions - the Base-Emitter (BE) junction, Collector-Emitter (CE) junction and Collector-Base (CB) junction.
The function of the Base-Emitter junction is to regulate the current flow between the emitter and the base of the transistor. The Collector-Emitter junction is the main switch for the current between the collector and the emitter. The Collector-Base junction works as a buffer between the collector and the base. When a small current is applied to the base, the Base-Emitter helps to regulate the voltage at the collector. This makes it possible for the transistor to amplify a small current into a larger current at the collector.
The JAN2N3418 transistor works in two modes - active and cut-off. When it is in active mode, the current flows from the base to the emitter, which induces a larger current at the collector. When it is in cut-off mode, the current is cut off and the voltage at the collector is zero.
Conclusion
The JAN2N3418 is a single bipolar junction transistor (BJT) from the NPN family. It is designed to have a maximum collector power dissipation of 500 mW, a maximum collector-emitter voltage of 25V, an emitter-base cutoff current of 400nA, and a collector-base cutoff current of 500nA. The device has an excellent thermal resistance and a wide operating temperature range of -65C to +225C.
The JAN2N3418 has many applications in different electronic applications. It can be used as a high-frequency amplifier, a low-noise amplifier, an oscillator, a current source, and a switching device. Its working principle is based on the physical principle of electron flow, wherein a small movement of electrons can induce a large current flow in an electronic circuit.
The specific data is subject to PDF, and the above content is for reference
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