Allicdata Part #: | 1086-2350-ND |
Manufacturer Part#: |
JAN2N3501UB |
Price: | $ 15.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 150V 0.3A TO39 |
More Detail: | Bipolar (BJT) Transistor NPN 150V 300mA 500mW Sur... |
DataSheet: | JAN2N3501UB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 14.19440 |
Series: | Military, MIL-PRF-19500/366 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 15mA, 150mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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.The JAN2N3501UB is a single, diffusion-mesa type NPN bipolar junction transistor (BJT) specifically designed for use in microwave power amplifier applications up to a maximum frequency of 8.8 GHz. It is used for a variety of applications including amplifier low-noise amplifiers, microwave power amplifiers, broadband amplifiers, and digital switching. The JAN2N3501UB\'s gain and high-dynamic range make it one of the most popular BJTs in the market.
The JAN2N3501UB is manufactured in the dual epitaxial design, which provides the desired performance levels with the lowest possible bias current. It is a junction type device with a minimal temperature coefficient, making it well suited for high-temperature applications. The JAN2N3501UB features an encapsulated E-pack, which provides superior thermal conductivity and protection of the internal semiconductor material.
The JAN2N3501UB has a wide range of application fields, including broadcast and communication systems, audio amplifiers, general-purpose A/D converters, motor drive systems, and power circuits. It is also used in high-efficiency circuits for power saving, high power rail-to-rail amplifiers, switching circuits, and linear amplifiers.
The working principle behind the JAN2N3501UB is relatively simple. It is a semiconductor device composed of two P-type layers sandwiched between two N-type layers. Simply put, when two layers of opposite conductivity types come together, a “junction” is formed and it is this junction that makes up the bipolar junction transistor.
When a voltage is applied to the base of the transistor, the electron or hole concentration changes and a current flows across the transistor junction. This current then gets modified by the device’s gain and can be amplified depending on the amount of voltage applied. This current can then be used to control a variety of electrical functions, such as switching on and off circuits and controlling currents flowing through other components.
The JAN2N3501UB is widely used in many different avenues, from communication systems and high-efficiency power saving devices to audio amplifiers and general-purpose A/D converters. It is a reliable, high-performance, and cost-effective device that offers superior performance and reliability compared to other devices of its class.
The specific data is subject to PDF, and the above content is for reference
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