JAN2N3507L

The JAN2N3500L is a single-device, linear silicon NPN bipolar junction transistor (BJT) designed for general purpose amplifiers, switching, and other small signal applications.

Overview

The JAN2N3500L is offered in a TO-39 metal can package and is made from high-speed, low-power, epitaxial-base silicon. It has a maximum operating temperature of 150°C, making it ideal for applications in the automotive, communications, industrial, automation, and consumer electronics markets. JAN2N3500L is available in airtight, metal cased packages, which ensures a long life and reliability of the device.

Features

• NPN Bipolar Junction Transistor
• Low Power
• High Speed
• Epitaxial Base Metal Can Package
• Collector-Emitter Voltage: 100 Vdc
• Collector Current: 100 mA
• Max Operating Temperature: 150°C
• Applications: General Purpose Amplifiers, Switching, and Other Small Signal Applications

Advantages

The JAN2N3500L’s low-power design and high-speed capabilities make it well suited for applications that require a low-power and fast switching BJT. Additionally, its robust design and wide range of operating temperatures make it ideal for environments that require a reliable, long-lasting BJT. Its ability to handle up to 100 mA allows for greater output power and the capability to switch and adjust current quickly, making the JAN2N3500L a great choice for switching, amplifying, and other small signal applications.

Application Field

The JAN2N3500L can be used in a variety of applications within the automotive, communications, industrial, automation, and consumer electronics markets. Applications in which the JAN2N3507L can be used include: signal amplifying, switching, amplification of signals received from sensors, switching of DC motors, signal modification and filtering, and a wide variety of other signal processing applications. It is also commonly used as a semiconductor component in industrial equipment, signal processing, and digital logic applications.

Working Principle

The JAN2N3500L is an NPN Bipolar Junction Transistor (BJT). It consists of three separate regions of semiconductor material, including a base, collector, and an emitter. An electric current of electrons flows from the base to the collector, and from the collector to the emitter. By varying the current applied to the base, the current flowing from the collector to the emitter is adjusted, making the BJT useful for amplifying and switching electronic signals.

By applying a small amount of current to the base, the BJT will become forward biased and a large amount of current will flow through the collector and emitter. These two junctions are known as the “active region”, and a large amount of current in this region will cause the transistor to amplify or switch the voltage or current connected to the emitter and collector terminals.

By applying a negative voltage to the base, the BJT will become reverse biased, and no current will flow through the collector and emitter. This is known as the “cut-off” state, and is ideal for switching applications. The JAN2N3500L is capable of achieving both the active and cut off states with great accuracy and speed, making it ideal for many switching and amplifying applications.

Conclusion

The JAN2N3500L is a low-power, high-speed, single-device bipolar junction transistor suitable for a wide range of applications in the automotive, communications, industrial, automation, and consumer electronics markets. Its superior design offers reliable performance and long lifespan, making it an excellent choice for small signal applications. Its ability to achieve both the active and cut-off states with great accuracy and speed makes the JAN2N3500L one of the most versatile BJTs available.