JAN2N5416S

Series:	Military, MIL-PRF-19500/485
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	2V @ 5mA, 50mA
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 50mA, 10V
Power - Max:	750mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39 (TO-205AD)

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IntroductionThe JAN2N5416S is a Silicon NPN transistor used in various applications. It has high frequency performance and comes in a standard TO-72 package. The JAN2N5416S transistor is designed for general purpose, high frequency operation, and provides very good gain-bandwidth product at high frequencies. Due to its excellent gain at high frequencies and high voltage rating, it is used in various RF applications such as amplifiers, oscillators, and switching.Features of JAN2N5416SThe JAN2N5416S is a silicon NPN transistor that is available in three package types. The three package types are TO-72 (standard) TO-74 (large packaging) and TO-220 (surface mount package). It has a wide range of features including:• Low Current Drain• High Frequency Performance• Standard TO-72 Package• Large Package: TO-74• High Voltage RatingApplicationsThe JAN2N5416S is intended for a wide range of applications. It can be used in many applications like:• RF Amplifiers• Oscillators• Switching• High-Power Amplifiers• Low-Noise Amplifiers• Radio Control Transmitters• Audio Amplifiers• Variable-Frequency Oscillators• Television Applications• Automotive Radio• Motor Control circuits• Other High-Frequency and High-Power applicationsWorking PrincipleThe JAN2N5416S is a NPN transistor that operates mainly on the principle of a voltage amplifier. It is basically a device which controls the amount of current flowing from the collector to the emitter. When a voltage is applied to the base of the transistor, it creates an electric field, which in turn allows current to flow from the collector to the emitter. This current is determined by the amount of voltage applied to the base.The current gain of the JAN2N5416S is relatively high. It has a DC current gain rating of 60. In addition, it has a very high frequency capability. It has a maximum frequency of 5 GHz, which enables it to be used in a variety of high frequency applications, such as RF amplifiers and oscillators.ConclusionThe JAN2N5416S is a silicon NPN transistor suitable for a wide range of applications. It has a low current drain and high frequency performance, which are ideal for high frequency and high power applications. In addition, it has an excellent gain-bandwidth product at high frequencies, making it suitable for RF amplifiers and oscillators. The JAN2N5416S also comes in a number of package types and has a very high voltage rating, making it suitable for a variety of applications.

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