JAN2N6249 Allicdata Electronics
Allicdata Part #:

1086-21087-ND

Manufacturer Part#:

JAN2N6249

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 200V 10A TO-3
More Detail: Bipolar (BJT) Transistor NPN 200V 10A 6W Through ...
DataSheet: JAN2N6249 datasheetJAN2N6249 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/510
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Power - Max: 6W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3
Supplier Device Package: TO-3 (TO-204AA)
Description

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A JAN2N6249 is a bipolar (BJT) transistor, specifically an NPN general purpose transistor usually found in electronic applications and equipment. It has an incredibly wide range of uses and is often used in both amplifying and switching applications. Comparing it to other types of transistors, it is considered a medium-power device—not as powerful as some, but still packing a powerful punch.

The JAN2N6249 is a two-lead device, with two terminals, or base and emitter leads, as well as a collector lead. It has internal connections, known as junctions, linking the emitter and collector, as well as the base and collector. The overall structure and arrangement of the JAN2N6249 is the same as most other commercial transistors of this type. Just like other transistors, current flows through the collector and emitter leads, and varying the voltage of the base determines the gain of current allowed through the device. To put it simply, the base controls the flow of electrons between the other two leads and thus can alter the amount of current allowed.

The JAN2N6249 comes with a number of features that make it well-suited for certain types of electronic equipment. Its features make it well positioned for amplifying and switching applications. First, its low noise characteristics allow for low distortion when paired with audio equipment, for example. Its high collector-base breakdown voltage, or maximum voltage between the collector and base, allows it to switch up to higher voltages when needed. Accordingly, it is also suitable to use with higher collector-emitter voltages and collector current levels. The maximum collector current can exceed 1A and these higher values can make the JAN2N6249 well-suited for acceleration sensor applications.

In addition to the JAN2N6249’s features, the way the device operates must also be considered when determining its suitability in different applications. The transistor acts as a switch, amplifying the signal that passes through its collector-emitter terminals. It essentially controls the current of the circuit and can be used as an on/off switch or as an amplifier for controlling the voltage levels. By using a positive voltage on the base, current from the collector can be controlled. Adding a resistor in series with the base can provide a more linear control on the output current.

In conclusion, the JAN2N6249 is a powerful and reliable transistor that is suitable in a wide range of applications. Its basic structure and operation are similar to most other transistors, with two terminals that control the flow of electrons between the emitter and collector. Its low noise characteristics, high collector-base breakdown voltage, and high collector current levels make it well-suited for both amplifying and switching applications, and it has the ability to switch up to higher voltages when needed. Although its relatively low power rating makes it more suited for use with medium-powered devices, the device is still a very viable option for many electronic designs.

The specific data is subject to PDF, and the above content is for reference

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