JAN2N6250

Series:	Military, MIL-PRF-19500/510
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	275V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1.25A, 10A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	8 @ 10A, 3V
Power - Max:	6W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3
Supplier Device Package:	TO-3 (TO-204AA)

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<p>Bipolar junction transistors (BJTs) are three-terminal electronic components that can act as either current-controlled switches (when used in their active mode) or voltage-controlled switches (when used in their saturation or cut-off mode). Those with three leads are known as single transistors. The JAN2N6250 is a single bipolar junction transistor (BJT) from Microsemi Corporation (formerly Aeroflex Microelectronics Solutions) that belongs to the family of NPN audio transistors.</p><p>The JAN2N6250 is designed for use in audio applications as preamplifiers, mixing circuits, driver stages, and other medium power modulated applications such as SCR/TRIAC drivers, diode switching, and low power amplifier applications. With its high-gain characteristics and low noise levels, it can achieve high-quality sound reproduction and switching control.</p><p>The JAN2N6250 is a widely used NPN transistor, designed to handle a wide range of power from 15mA to 260mA with a wide voltage range of 8V to 175V. The maximum power dissipation of the BJT is 250mW and the maximum collector-emitter voltage of the BJT is 300V. It is capable of switching speeds up to 100kHz and has a minimum gain of 300 at current levels of 500mA. The cutoff frequency of the JAN2N6250 ranges from 10kHz to 70kHz. The maximum operating temperature range of the transistor is -55°C to 150°C.</p><p>The JAN2N6250 is packaged in an inexpensive, commonly available metal can package (TO-5). This package is designed to provide excellent mechanical stability, shielding, and heat sinking. The TO-5 metal can also aid in the mounting of the transistor, allowing it to be connected more securely to a printed circuit board.</p><p>A bipolar junction transistor (BJT) has three terminals, the collector, the emitter and the base. A BJT is an active device, meaning it can control the current flow through it. In a NPN type BJT, current flows from the collector to the emitter when the base-emitter voltage is greater than the base-collector voltage. This current is called the collector current, it is controlled by the amount of base current that is supplied to the transistor. When the base-emitter voltage is less than the base-collector voltage, the transistor is in a cut-off state and no current flows through the transistor. The JAN2N6250 has an internal base-collector junction and the base-emitter junction.</p><p>The JAN2N6250 is designed to provide high gain with low noise. It has a fast switching time and a low turn-on and turn-off time. The low on-resistance and minimal power dissipation of the JAN2N6250 make it ideal for applications that require frequent switching and low power consumption.</p><p>The JAN2N6250 is suitable for use in high-frequency, low noise, and low power applications such as in audio preamplifier circuits. It can also be used as a driver stage in switching applications as it has high-gain characteristics and low noise levels. The JAN2N6250 can be used with a wide range of input voltages from 8V up to 175V and can handle up to 250mW power dissipation with a wide range of output currents from 15mA to 260mA, making it suitable for low to medium power switching.</p>

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