JAN2N7372 Allicdata Electronics
Allicdata Part #:

1086-16227-ND

Manufacturer Part#:

JAN2N7372

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 80V 5A TO254
More Detail: Bipolar (BJT) Transistor PNP 80V 5A 4W Through Ho...
DataSheet: JAN2N7372 datasheetJAN2N7372 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/612
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 4W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Description

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The JAN2N7372 is an NPN silicon epitaxial transistor with a TO-3 package style. It has an a rating of 150 watts and an endurance of greater than one million operating hours. This transistor is designed to operate in a wide range of applications, including bipolar result/preamp circuitry, high-current switching, and amplifier towers. It is also suitable for amplifier circuits requiring very low power dissipation and high voltage, and is capable of very high current gain.

The JAN2N7372 is a three-terminal device that requires only a small amount of energy to control its current gain, also known as its base current gain. Its base consists of a base region and a collector, with a parameter called "Base-Emitter Voltage" (BEV, also known as the "turn-on voltage") between them. The voltage between the base collector junction (BCV) and the emitter terminal determines the degree of current amplification. When the voltage between the base and emitter junction is greater than the BCV, the current gain increases.

The JAN2N7372 has a wide variety of applications, including industrial control, audio and video equipment, instrumentation, consumer applications and switching. This device can be used in applications such as amplifier circuits and power amplifiers, as well as high-voltage inductive loads, rectifiers, and other switching circuits. It is also useful in low-level signal processing applications, and it can be used to drive a wide range of loads. The JAN2N7372 has a thermal shutoff function, which prevents it from overheating when the temperature rises above the specified maximum operating temperature.

The JAN2N7372 has a collector-emitter breakdown voltage of 250 volts and a collector-base breakdown voltage of 450 volts. It has an operating temperature range of -55 to 150 degrees C, and a storage temperature range of -65 to 150 degrees C. It also has an operating frequency range of DC to 100 kHz. The JAN2N7372 is available in TO-3, TO-66, and TO-92 package styles.

The JAN2N7372 transistor is a versatile device that can be used in a wide range of applications. It has a high current gain and a very low power dissipation, and it is capable of withstanding high voltages. It also has a thermal shutoff feature, which makes it suitable for use in applications where the temperature may rise above the specified maximum. It is available in a range of packages and can be used in low-level signal processing applications, as well as amplifier and power amplifier circuits.

The JAN2N7372 is an NPN silicon epitaxial transistor with a TO-3 package style, designed for use in a wide range of applications. Its base consists of a base region and collector, and its base-emitter voltage determines its current gain. It has a collector-emitter breakdown voltage of 250 volts, collector-base breakdown voltage of 450 volts, and operating temperature range of -55 to 150 degrees C. It is suitable for amplifier circuits requiring very low power dissipation and high voltage, and it is capable of withstanding high voltages.

The JAN2N7372 is an NPN silicon epitaxial transistor with a TO-3 package style, designed for use in a wide range of applications. Its base consists of a base region and collector, and its base-emitter voltage determines its current gain. It has a collector-emitter breakdown voltage of 250 volts, collector-base breakdown voltage of 450 volts, and operating temperature range of -55 to 150 degrees C. It is suitable for amplifier circuits requiring very low power dissipation and high voltage, and it is capable of withstanding high voltages.

The JAN2N7372 is an NPN silicon epitaxial transistor with a TO-3 package style that is designed for a wide range of applications. It has a high current gain and a very low power dissipation, and it is capable of withstanding high voltages. The base consists of a base region and collector, and the base-emitter voltage determines the degree of current amplification. It has a collector-emitter breakdown voltage of 250 volts and collector-base breakdown voltage of 450 volts, and it has an operating temperature range of -55 to 150 degrees C. It is suitable for amplifier circuits requiring very low power dissipation and high voltage, and it is capable of withstanding high voltages.

In conclusion, the JAN2N7372 transistor is a versatile device that can be used in a wide range of applications. It has a high current gain and a very low power dissipation, and it is capable of withstanding high voltages. Its base consists of a base region and collector, and the base-emitter voltage determines the degree of current amplification. It has a collector-emitter breakdown voltage of 250 volts and collector-base breakdown voltage of 450 volts, and it has an operating temperature range of -55 to 150 degrees C. The JAN2N7372 is suitable for amplifier circuits requiring very low power dissipation and high voltage, and it is capable of withstanding high voltages.

The specific data is subject to PDF, and the above content is for reference

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