| Allicdata Part #: | JANS1N6318CUS-ND |
| Manufacturer Part#: |
JANS1N6318CUS |
| Price: | $ 253.51 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | VOLTAGE REGULATOR |
| More Detail: | Zener Diode 5.6V 500mW ±2% Surface Mount B, SQ-MEL... |
| DataSheet: | JANS1N6318CUS Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 228.15600 |
| Series: | Military, MIL-PRF-19500/533 |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 5.6V |
| Tolerance: | ±2% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 8 Ohms |
| Current - Reverse Leakage @ Vr: | 5µA @ 2.5V |
| Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SQ-MELF, B |
| Supplier Device Package: | B, SQ-MELF |
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Diodes - Zener - Single comprise of a junction between two semiconductor materials, each having a different electrical conductivity and a heavily doped junction region. The JANS1N6318CUS is an epitaxial Silicon Zener Diode designed for applications which require very tight parameter distribution and very high reliability. It features very low Zener impedance and high temperature stability.
The JANS1N6318CUS utilizes a single zone or double zone construction to match tight electrical parameters. As the name implies, double zone construction produces two distinct depletion regions with different doping concentration levels. This allows the designer to achieve better performance, while still maintaining a single junction. A single zone construction, on the other hand, is a single region with an increase in doping concentration that results in controlled breakdown.
The major difference between Zener diodes and other types of diodes is that the Zener diode is designed to operate in the reverse bias mode. The Zener layer, which is located near the junction, acts as an insulator and prevents excessive current flow. By controlling the voltage applied across the junction, the Zener diode will allow a certain amount of current to pass through it without breaking down. This is due to its voltage breakdown property, which is known as the “Zener Breakdown”.
The Zener breakdown occurs when the reverse breakdown voltage is reached. Once the breakdown voltage is reached, the diode begins to act like a low-resistance conductor and allows electric current to flow through it. This process allows the use of the diode as a voltage regulator, stabilizer or even an electric power source.
The JANS1N6318CUS has a Zener voltage of 3.3V and a maximum power dissipation of 500mW. It is capable of operating at temperatures ranging from -65°C to +150°C and can be used in a variety of application fields. Some common applications include voltage regulation, input surge protection and reverse current protection.
The JANS1N6318CUS is commonly used in automotive systems, communication systems, security systems and industrial control systems, due to its high temperature stability, low noise, improved current stability and low Zener impedance. The device is also used in switching power supplies and DC/DC converters, due to its low voltage breakdown and good thermal stability.
In conclusion, the JANS1N6318CUS is a Zener diode designed to provide superior performance, reliability and environmental protection. It is capable of operating in a wide range of temperatures and has a low forward voltage drop and high reverse breakdown voltage making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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JANS1N6318CUS Datasheet/PDF