JANS2N4150

Series:	Military, MIL-PRF-19500/394
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	70V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 1A, 10A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 5A, 5V
Power - Max:	1W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5

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Introduction

The JANS2N4150 is a single-stage NPN transistors (Bipolar Junction Transistor - BJT) specifically designed for use in RF applications. It is a low-noise and high-power BJT with a wide range of power handling capability. This device is manufactured by Fairchild Semiconductor and can be used in multiple applications including low-noise amplifiers, RF power amplifiers, and high frequency oscillators.

Application Field

The JANS2N4150 is used in a variety of applications including low-noise amplifiers, RF power amplifiers, and high frequency oscillators.Low-noise amplifier (LNA) applications for the JANS2N4150 BJT include narrowband, medium-band, and wideband applications. These amplifiers are often used in RF radio, WiFi, and cellular systems.The JANS2N4150 can also be used in RF power amplifier applications such as power amplifiers for television receivers, radio transceivers, and other high power requirements.High frequency oscillator applications for the JANS2N4150 are also possible. These applications include voltage-controlled oscillators (VCOs), frequency synthesizers, and variable-frequency oscillators (VFOs).

Working Principle

The basic functioning of the JANS2N4150 BJT can be explained using the commonly known transistor construction. It consists of three nodes: the emitter, base, and collector. These three nodes are connected with three doped regions. For the JANS2N4150 BJT, the emitter and collector regions are lightly doped while the base region is heavily doped.When current is applied to the base node, a voltage drop occurs across the base-emitter junction causing a high electric field. This electric field attracts free electrons from the emitter and base regions, allowing a large injection current to flow from the emitter to the collector. This current is the current amplified by the BJT.The amplification of a BJT is determined by current gain also known as the hFE of the device which describes the ratio of the output current to the input current. The current gain of the JANS2N4150 is between 150 and 250, meaning that a small current applied to the base will generate a larger current from the collector, amplifying the original signal.

Conclusion

The JANS2N4150 is a single-stage NPN transistors (Bipolar Junction Transistor - BJT) specifically designed for use in RF applications. This device is manufactured by Fairchild Semiconductor and can be used in multiple applications including low-noise amplifiers, RF power amplifiers, and high frequency oscillators. The JANS2N4150 BJT works by injecting free electrons from the emitter and base regions, allowing a large current to flow from the emitter to the collector at a given voltage. The amplification of a BJT is determined by current gain, with the current gain of the JANS2N4150 being between 150 and 250.

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