Allicdata Part #: | 1086-16120-ND |
Manufacturer Part#: |
JANS2N3637UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 175V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 175V 1A 1.5W Surface... |
DataSheet: | JANS2N3637UB Datasheet/PDF |
Quantity: | 1000 |
Series: | Military, MIL-PRF-19500/357 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 175V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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The JANS2N3637UB is a highly efficient and reliable transistor for a variety of amplifying and switching applications. It’s part of the bipolar junction transistor (BJT) family, and is a single device. This highly efficient, cost-effective transistor is perfect for those looking for a device that performs consistently over a wide range of temperatures, while still providing great voltage gain.
The JANS2N3637UB is made primarily out of silicon and can handle a wide range of operating conditions. It has a DC current gain of up to 70 and a peak output voltage of up to 70 volts, and can handle a maximum collector current of 200 mA. It also features a wide range of package options, including a 4-pin TO-18 metal case option. All of these features make the JANS2N3637UB an ideal device for a variety of amplifying and switching applications, such as low-noise amplifiers and circuits with low-voltage signals.
The JANS2N3637UB works by utilizing the behavior of holes and electrons. It has three layers - the emitter, the base, and the collector - with each layer structured in such a way that it affects the behavior of the electrons and holes in different ways. When a small current is applied to the base layer of the transistor, the base-emitter diode conducts an amplified large current from the collector to the emitter. This amplified current is then used for the desired application. The JANS2N3637UB works by responding to the small base current, and controlling the larger collector current.
The JANS2N3637UB is often used in applications that require high gain or low noise. It can be used in audio amplifiers, power supplies, and even in radio receivers and transmitters. It’s versatile and can handle a variety of temperature conditions, ranging from -40°C to +85°C. With its low-power consumption and high gain, the JANS2N3637UB is an ideal device for those looking for a reliable and cost-effective transistor.
Overall, the JANS2N3637UB is an excellent device for those looking for an efficient, high-quality transistor to use in amplifying and switching applications. With its low power consumption and low noise operation, the JANS2N3637UB is a perfect solution for those looking for a reliable and cost-effective device. It’s highly efficient and cost-effective, and can handle a variety of temperature conditions, making it an ideal choice for those wanting a reliable transistor.
The specific data is subject to PDF, and the above content is for reference
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