JANS2N3019 Allicdata Electronics
Allicdata Part #:

1086-15159-ND

Manufacturer Part#:

JANS2N3019

Price: $ 70.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 80V 1A TO-5
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 800mW Through...
DataSheet: JANS2N3019 datasheetJANS2N3019 Datasheet/PDF
Quantity: 933
1 +: $ 63.71820
10 +: $ 59.73850
25 +: $ 56.95070
Stock 933Can Ship Immediately
$ 70.09
Specifications
Series: Military, MIL-PRF-19500/391
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Power - Max: 800mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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The JANS2N3019 transistor is a single bipolar junction transistor (BJT). It is a general-purpose transistor designed for medium current, low-power switching and amplifier applications. The device is designed to provide high current gain over a wide range of collector currents.

The JANS2N3019 has an NPN type of bi-polar transistor, which consists of an emitter, a base, and a collector. It can be used in both common-emitter and common-collector configurations. It is manufactured in a TO-92 plastic package.

The JANS2N3019 works on the principle of minority carrier injection. When the base-emitter junction is forward biased, electrons from the emitter are injected into the base region, which is depleted of free electrons. The electrons travel across the base-collector junction, which is reverse biased, and are collected by the collector. This process creates a current flow from the collector to the emitter. The current gain of this device is determined by the ratio of the collector current to the base current.

The JANS2N3019 can be used in a wide range of applications, such as audio amplifiers, low-frequency amplifiers, switching circuits, and signal processing circuits. It can be used in low-power switch-mode power supplies, and in automatic lighting systems. It can also be used in automotive applications and in telecommunications systems.

The JANS2N3019 has a low noise figure and a high gain bandwidth product. It has a maximum collector current rating of 800mA and a maximum voltage of 30V. It has an operating temperature range of -55°C to 150°C, and a storage temperature range of -55°C to 175°C. It has a low Cob figure, which means it has low capacitance, enabling fast switching speeds.

In conclusion, the JANS2N3019 is a general-purpose transistor designed for medium current, low-power switching, and amplifier applications. It works on the principle of minority carrier injection, and can be used in a wide range of applications, such as audio amplifiers, low-frequency amplifiers, switching circuits, and signal processing circuits. It has a low noise figure and a high gain bandwidth product, and is manufactured in a TO-92 plastic package. It also has a low Cob figure, enabling fast switching speeds.

The specific data is subject to PDF, and the above content is for reference

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