Allicdata Part #: | JANSR2N2221AUB-ND |
Manufacturer Part#: |
JANSR2N2221AUB |
Price: | $ 75.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RH SMALL-SIGNAL BJT |
More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 500mW Surf... |
DataSheet: | JANSR2N2221AUB Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 68.61900 |
Series: | Military, MIL-PRF-19500/255 |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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The JANSR2N2221AUB is a popular type of single bipolar junction transistor (BJT). It is encased in a TO-18 package and is popular due to its low cost and good performance. It is often used in applications such as switching, amplification, and boosting.
BJTs are composed of three terminals, the collector, base and emitter. They are commonly used in a variety of circuit blocking, latching, and frequency conversion roles. The JANSR2N2221AUB in particular is popular due to its ratings of collector-to-base voltage (Vces)=6V, collector current (IC) = 200mA, total power dissipation (Pt)=625mW, and saturation region minimum current gain (hFE) minimum≥100. It is a general purpose BJT.
The device has two modes of operation, active and cut-off. In the active mode, a voltage is applied to the base and a larger current will flow from the collector to the emitter. This is known as forward biased. In the cut-off mode, no forward bias is applied and the junction will be deactivated and no current can flow. This can be used to ensure that no current flows in applications such as digital logic or amplifiers.
The BJT works in a very unique way. When the base receives a signal, the electrons in the base region become excited and many of them cross the junction into the collector region. This allows for current to flow. As the current is increased, the collector-base voltage also increases and this allows for more electrons to cross over. This is known as gain and is an important factor in amplifying signals.
The device is also commonly used in power amplifiers and switching circuits. It can be used to switch a large current up or down. This is accomplished by applying a higher voltage to the base, causing more electrons to flow into the collector. This allows for high current to pass through the collector to the emitter and hence allowing for the switching of high current.
The JANSR2N2221AUB is a popular single bipolar junction transistor that is used in a variety of applications. Due to its low cost and good performance, it is an ideal choice for those seeking a low cost switch and amplifier. Its ability to amplify and switch large currents makes it a versatile device for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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