KSC1008OTA

Transistors - Bipolar (BJT) - Single

KSC1008OTA is a single, high power bipolar junction transistor (BJT) manufactured using Toshiba’s advanced U-MOS II thin-oxide. U-MOS II is a proprietary thin-oxide technology which greatly lessens the on-resistance of the bipolar device while providing high-frequency operation, high current drive and high voltage capability. The KSC1008OTA is designed to provide high output power while providing low noise in applications such as power amplifiers, low drop-out (LDO) controllers, switching regulators, bootstrapping and other related power management applications.

Features

• Low-on-resistance
• High-frequency operation
• High-current drive
• High voltage capability
• Low noise

Applications

• Power amplifiers
• Low drop-out (LDO) controllers
• Switching regulators
• Bootstrapping

Working Principle

KSC1008OTA is an NPN-type bipolar junction transistor (BJT). As an NPN-type device, carriers of opposite charge (holes and electrons) pass from the p-type material (base region) to the n-type material (collector and emitter regions) under controlled conditions. When a current is supplied to the base, the voltage drop in the base-emitter junction is sufficient to create a saturation effect, allowing for current to flow between the collector and emitter regions. This is referred to as forward bias. The collector-emitter voltage is below the threshold of the base-emitter junction, causing electrons to flow from the emitter to the collector, thus allowing the current to flow through the collector-emitter path.

Structure

The structure of an NPN-type bipolar junction transistor is typically composed of a N-type emitter region, a P-type base region and a N-type collector region. These regions are connected as shown in the picture to the right. The contact regions of the three regions are connected to contact electrodes, enabling current to flow through the device. When a voltage is applied to the contact electrodes, a current will flow through the device, resulting in a voltage drop across the base-emitter junction, creating the forward bias. This forward bias then allows for current to flow from the emitter to collector region through the base region.

Applications

KSC1008OTA transistors can be used in a wide range of applications, from low drop-out (LDO) controllers, switching regulators and power amplifiers, to bootstrapping and other related power management applications. KSC1008OTA transistors are ideal for use in high power systems, providing low on-resistance, high current drive, high-frequency operation and low noise characteristics.

Conclusion

KSC1008OTA transistors are high performance, single bipolar junction transistors manufactured using Toshiba’s advanced U-MOS II thin-oxide process. It has low-on-resistance, high-frequency operation, high-current drive and high voltage capability, making it ideal for use in high power systems. These transistors have been designed for a wide range of applications from low drop-out (LDO) controllers, to switching regulators and power amplifiers, to bootstrapping and other related power management.