Allicdata Part #: | KSC1623OMTF-ND |
Manufacturer Part#: |
KSC1623OMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 100mA 250MHz 200m... |
DataSheet: | KSC1623OMTF Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 1mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | KSC1623 |
Description
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.Introduction
KSC1623OMTF is a single bipolar junction transistor (BJT) developed by KSC Corporation, a leading semiconductor manufacturer in Japan. It is commonly used in high-frequency and linear amplifier applications, such as audio amplifiers, digital signal processing (DSP) applications, cellular phone transceivers, and optical communications systems. This article will provide an introduction to the device, an overview of its various application fields, and a detailed description of its working principle.Overview of Applications
The KSC1623OMTF is a high-performance BJT that can be used for various applications, including high-frequency and linear amplifier applications, audio amplifiers, DSPs, cellular phone receivers, and optical communication systems. Its distortion-free high-frequency characteristics and linear amplification capabilities make it highly suitable for these applications.In higher-performance applications, such as cellular phones and optical communication systems, the KSC1623OMTF is typically combined with other similar BJTs to form an extended frequency response (EFR) linear amplifier. This can be used to boost signal power in order to reach longer transmission distances or improve system gain.The KSC1623OMTF is also commonly used in audio amplifiers. Its high-frequency and low-noise characteristics make it ideal for noise-sensitive applications such as speech recognition systems, speaker systems, and other audio electronics.Working Principle
The KSC1623OMTF is a single-channel bipolar junction transistor (BJT). It is composed of three sections, namely the emitter, collector and base regions. The emitter region is specially engineered to provide a larger current gain than conventional BJTs.In operation, a voltage is applied to the base, which induces a current flow through the base-emitter junction (BEJ). This current is multiplied by the current gain of the transistor and flows through the emitter-collector (EC) junction, producing an output current. The current gain of the transistor can be adjusted by changing the applied base voltage, allowing the output current to be precisely controlled.The KSC1623OMTF is designed to operate in the high-frequency and linear amplifier applications, with a maximum frequency of up to 1 GHz and a wide operating range. It can also be used for low-noise operations, such as in cellular phones and optical communication systems.Conclusion
The KSC1623OMTF is a single bipolar junction transistor (BJT) developed by KSC Corporation. It is a high-performance device that can be used for various applications, such as high-frequency and linear amplifier applications, audio amplifiers, DSPs, cellular phone receivers, and optical communication systems. It has a maximum frequency of up to 1 GHz and a wide operating range, making it an ideal device for noise-sensitive applications. Its distortion-free high-frequency characteristics and linear amplification capabilities make it highly suitable for these types of applications. Its working principle is based on the voltage applied to the base to induce a current flow through the BEJ, which is then multiplied by the current gain of the transistor and flows through the EC junction, producing an output current.The specific data is subject to PDF, and the above content is for reference
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