KSC1507OTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	200µA
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	2V @ 5mA, 50mA
Current - Collector Cutoff (Max):	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 10V
Power - Max:	15W
Frequency - Transition:	80MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	KSC1507

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KSC1507OTUKSC1507OTU is a high-effective, versatile, and robust transistor device, which is a single transistor (BJT) of the bipolar family. This BJT transistor is usually categorized as a low-noise device offering excellent thermal characteristics and very minimal thermal drift. It is one of the most commonly used and most reliable transistors.KSC1507OTU is typically used for applications with high performance, such as device and medical control, automotive control systems, audio amplifiers, and industrial control. This device is also well-suited for low and medium power amplifiers, power switching inductive loads, as well as audio switching applications.KSC1507OTU has a typical working voltage range of 9 volts to 12 volts. It is generally employed in devices working in temperatures ranging from -55℃ to +125℃. This general purpose transistor exhibits high reliability and, therefore, is suitable for long-term use in a wide variety of electrical and electronic systems.KSC1507OTU has a maximum collector current of 100mA and a power dissipation of 500mW. Its DC current gain (hFE) can range from 50 to 600, depending on the specific requirements of the application. Its ultra-low noise feature often makes KSC1507OTU a preferred choice for audio applications, where low-level signals must be amplified without introducing any distortion.The working principle of KSC1507OTU involves a bipolar junction transistor (BJT) combining two p-n junctions. One junction consists of n-type and p-type semiconductor materials, with the other having p-type and n-type materials. Using this device, current drawn from the base flows through the collector-emitter path, controlling the current in the emitter-collector path.In order to operate a KSC1507OTU transistor, an electric potential applied to the base conduction is also required. The collector current is a fraction of the base current. This fraction is determined by the voltage between the base and emitter. This process allows current control of the device when a small AC or DC control voltage is applied to the base leads.Furthermore, the small size of KSC1507OTU transistors makes them suitable for use in a wide range of applications, including working with small and portable systems. Additionally, the high thermal stability makes it a robust device for long-term performance, even when subjected to high temperatures.In summary, KSC1507OTU is a single transistor of the bipolar family, widely used for applications with high performance. It is suitable for a wide variety of applications, such as device and medical control, automotive control systems, audio amplifiers, power switching inductive loads, and industrial control. Its maximum collector current is 100mA and its DC current gain (hFE) can range from 50 to 600. The working principle of the device involves an applied electric potential to the base conduction. Its small size and robustness make it a great choice for many different projects.

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