Allicdata Part #: | KSD1273P-ND |
Manufacturer Part#: |
KSD1273P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 3A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 30MHz 2W Throu... |
DataSheet: | KSD1273P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 2A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 800 @ 500mA, 4V |
Power - Max: | 2W |
Frequency - Transition: | 30MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Base Part Number: | KSD1273 |
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The KSD1273P is a type of bipolar junction transistor (BJT). It is a single transistor device that has two junctions which are formed by sandwiching together two semiconductor materials (typically silicon or germanium). It has an emitter, a base and a collector. The base-emitter junction is forward biased, resulting in the current flowing through the transistor. The collector-base junction then becomes reverse biased, preventing further current from flowing from the collector to the base.
The KSD1273P is primarily used in low-voltage and low-power applications such as powering small digital devices, or amplifying radio or audio signals. Its operating frequency is relatively low at 0.5-100MHz, making it an ideal choice for use in these fields. Its power dissipation is also low at 2-15 watts. On the other hand, its collector current (IC) is relatively high at 10A. This makes the KSD1273P well suited for switching applications, such as transistors in electronic switches.
One of the advantages of using the KSD1273P as opposed to other types of transistors is its low power dissipation and high collector current. This is due to its alternating layout, which increases the surface area of the collector-base junction, allowing for a larger current flow and higher voltage capacity without increasing the amount of power needed. This makes the KSD1273P ideal for applications that require more current and higher voltages, but still need to keep power consumption low.
The KSD1273P is an excellent choice for use in many different applications. Its combination of low power dissipation, high current and low operating frequency makes it well suited for low-voltage and low-power applications such as powering small digital devices, or amplifying radio or audio signals. Its alternating layout allows for higher current flow and higher voltage capacity without the need for increased power consumption. This makes the KSD1273P a great choice for many different applications such as transistors in electronic switches, audio amplifiers and other applications that require current capacity and voltage capacity without the need for additional power consumption.
The specific data is subject to PDF, and the above content is for reference
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