| Allicdata Part #: | KSD1408GTU-ND |
| Manufacturer Part#: |
KSD1408GTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 80V 4A TO-220F |
| More Detail: | Bipolar (BJT) Transistor NPN 80V 4A 8MHz 25W Throu... |
| DataSheet: |  KSD1408GTU Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 4A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 300mA, 3A |
| Current - Collector Cutoff (Max): | 30µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 500mA, 5V |
| Power - Max: | 25W |
| Frequency - Transition: | 8MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
Description
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The KSD1408GTU transistor is a long-channel double-gate metal-oxide semiconductor field-effect transistor (MOSFET). It is a type of MOSFET that has two separate gates, one on each side of the base. It is also known as a double-gate field-effect transistor, or dual-gate FET, and is ideal for use in power switching applications.The KSD1408GTU is a three-terminal, high-performance, high-breakdown voltage, and low-threshold voltage device that can be used for various power switching applications. It is characterized by a low input resistance, a wide gate-source voltage range, a large gate-source capacitance, and a large on-state current capacity.The KSD1408GTU transistor can be used in a variety of power switching applications, such as motor control, AC/DC converters, switching power supplies, uninterruptible power supplies, and in industrial and automotive control systems. It is especially suitable for use in applications where high switching speeds, low loss, and high reliability are required.The working principle of the KSD1408GTU transistor is quite simple. It consists of two gates, one on each side of the base. The gate-source voltage causes a charge to accumulate at the gates, which in turn causes a channel to form between the source and drain. This allows the current to flow between the source and the drain and can be adjusted by applying a voltage to the gates.In addition, the KSD1408GTU can also be used in order to control the gate of other transistors and so can be used in order to build complex circuits. For example, it can be used in conjunction with other power field effect transistors (FETs) in order to construct a H-bridge circuit, which is a fundamental circuit in the field of electronics.In conclusion, the KSD1408GTU is a versatile, high-performance three-terminal device that is suitable for use in many power switching applications. With its low input resistance, wide gate-source voltage range, large gate-source capacitance, and large on-state current capacity, it can be used to build complex power switching circuits.
The specific data is subject to PDF, and the above content is for reference
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