KSD1273QYDTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 2A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	500 @ 500mA, 4V
Power - Max:	2W
Frequency - Transition:	30MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack, Formed Leads
Supplier Device Package:	TO-220F-3 (Y-Forming)
Base Part Number:	KSD1273

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Introduction

The KSD1273QYDTU (also known as a “dual-gate MOSFET”) is a type of transistor used in a wide range of applications, primarily to switch signals and provide amplification. It belongs to the category of transistors known as “Bipolar (BJT) - Single” which are widely used in microelectronics, optoelectronics, and communications. This article will give a brief overview of the KSD1273QYDTU, its application field and working principle.

KSD1273QYDTU Overview

The KSD1273QYDTU is a type of transistor designed for applications that require high speed switching and reliable performance. It is a two-gate MOSFET (metal-oxide-semiconductor field effect transistor) which features an optimized dual-gate structure that provides enhanced switching performance, improved thermal stability and reduced gate-to-drain capacitance. It also has wide temperature operating range and high input impedance, making it suitable for many commercial applications.

KSD1273QYDTU Application Field

The KSD1273QYDTU can be applied in a wide range of commercial and industrial applications. Some of its most common applications include:

• Switching power amplifiers
• Telecommunications equipment
• Motor control systems
• Metering and instrumentation
• Automotive electronics
• Robotics
• Audio processing
• High-frequency amplifiers

KSD1273QYDTU Working Principle

The KSD1273QYDTU is a two-gate MOSFET which uses an optimized dual-gate structure. At its core, it consists of three terminals: the source, the drain and the gate. The gate is connected to two separate transistors within the structure, which are known as the “First” and “Second” gates. When a voltage is applied to the gate, electrons are activated and moved through the channel between the source and drain, providing a current flow. The first gate controls the majority current and the second gate acts as an “on/off” switch, allowing the MOSFET to be quickly and easily switched on and off.The KSD1273QYDTU is a versatile device, and its dual-gate structure allows for further customization. For instance, the two gates can be used for different purposes; the first gate can control the current flow and the second gate can be used for switching and protection. Additionally, the wide temperature range gives the KSD1273QYDTU great versatility in applications such as motor control, robotics, telecommunications and instrumentation.

Conclusion

In conclusion, the KSD1273QYDTU is a type of transistor belonging to the category of transistors known as “Bipolar (BJT) - Single”. It is a two-gate MOSFET which features an optimized dual-gate structure and a wide temperature range. It is mainly used in applications requiring high speed switching and reliable performance, such as switching power amplifiers, telecommunications equipment and motor control systems. The dual-gate structure of the KSD1273QYDTU also allows for customization, making it a versatile device with a wide range of applications.

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