KSD1588OTU Allicdata Electronics
Allicdata Part #:

KSD1588OTU-ND

Manufacturer Part#:

KSD1588OTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 7A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 60V 7A 2W Through Ho...
DataSheet: KSD1588OTU datasheetKSD1588OTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3A, 1V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Description

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The KSD1588OTU, also known as the Bipolar (BJT) Transistor, is an electronic device commonly used in a variety of devices. This device is constructed of three semiconductor layers that form a junction, which allows current to pass through it. The three layers are the emitter, the base, and the collector. The device is used to regulate power that passes through the circuit, and it can also act as a switch in some cases. This device is made from a single layer of n-type silicon and is found in many electronic components.

The KSD1588OTU’s application field covers many categories including amplifier design, signal amplification, signal switching, and voltage regulation. It is also used in communication equipment, audio amplifiers, data converters, regenerative circuits, and gate drivers.This device also offers good frequency support capabilities and is a popular choice in modern applications. It is suitable as an active element in analog and digital circuitry, signal processing stages, and high-speed circuits.

The KSD1588OTU works on the principle of electron depletion. As a result of this principle, the voltage across the BJT is developed in a manner that reduces the current flow through the device. This is accomplished by applying a voltage to the base, creating a barrier that keeps electrons from passing through. This reduces the current between the emitter and the collector. This type of transistor is also susceptible to temperature variations, and it may require additional circuitry to protect the device from overvoltage conditions.

The KSD1588OTU also has an internal resistance, called the Early effect, which determines the maximum voltage that can be placed on the base. This characteristic ensures that the base current remains constant as the collector voltage or collector current changes. This device is commonly used as an amplifier in audio applications, as it provides good audio fidelity and low distortion. It is also used in power control circuits, as it can be used to regulate the power that is supplied to a device.

In addition to its current and voltage regulating capabilities, the KSD1588OTU is also able to respond quickly to changes in its environment. It has a fast switching speed, making it suitable for applications in communication equipment, such as modems, radios, and other similar communications devices. The fast switching speed also makes it suitable for controlling digital logic signals.

The KSD1588OTU is an excellent choice for many applications due to its reliable performance and versatility. It stands up to temperature variations and offers a wide range of current and voltage regulation capabilities. It is also easy to use and requires minimal external components. It is popular for use in audio amplifier circuits, data converters, and power control circuits.

The specific data is subject to PDF, and the above content is for reference

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