| Allicdata Part #: | KSD1589OTU-ND |
| Manufacturer Part#: |
KSD1589OTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN DARL 100V 5A TO-220F |
| More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 5A ... |
| DataSheet: | KSD1589OTU Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 5A |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 3mA, 3A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 3000 @ 3A, 2V |
| Power - Max: | 1.5W |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
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Bipolar Junction Transistors (BJTs) are a type of transistor that is widely used in many different applications. The KSD1589OTU is a single BJT that is designed to be used in applications where high frequency switching and audio amplifying are necessary. The KSD1589OTU is an NPN-type BJT that is constructed using a Silicon substrate material.
BJTs are three-terminal active components that consist of a collector, an emitter, and a base. When a small current applied to the base, this causes a current amplification to appear across the collector/emitter terminals. BJTs have the ability to act as either an amplifier or as a switch depending on the amount of current applied to the base. This current amplification characteristic makes them ideal for applications such as audio amplifiers, switching circuits, and more.
The KSD1589OTU is a single BJT that has a maximum collector current of 0.5 A. It also features a maximum collector-emitter voltage of 25 V. This allows the transistor to be used with a wide range of loads. It also has a Collector-Base Voltage of 80 V, and an Emitter-Base Voltage of 5 V. These values provide the transistor with a wide range of voltage control.
In terms of applications, the KSD1589OTU can be used in a wide range of audio amplifying circuits. The transistor is capable of delivering high-frequency switching for powering small speakers. This makes it possible to amplify audio signals with minimal distortion. Additionally, the transistor is well-suited for low-power switching applications. This makes it useful for a range of applications from controlling small motors to interface circuitry.
In terms of working principle, the KSD1589OTU is a single BJT with an NPN type design. In order for the transistor to amplify a signal, a small current must be applied to the base of the device. When this current is applied, it will cause a current amplification to occur across the collector/emitter terminals. This allows the transistor to act as an amplification or as a switch, depending on the amount of current applied to the base.
In conclusion, the KSD1589OTU is a single BJT that is designed to be used in applications where high-frequency switching and audio amplifying are required. It is an NPN-type BJT that is capable of delivering 0.5 A of current and features a Collector-Base Voltage of 80 V and an Emitter-Base Voltage of 5 V. The KSD1589OTU is commonly used in audio amplifying circuits, low-power switching circuits, and more, and its working principle is based on current amplification from a small current applied to the base.
The specific data is subject to PDF, and the above content is for reference
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KSD1589OTU Datasheet/PDF