KSD1691YS Allicdata Electronics
Allicdata Part #:

KSD1691YSFS-ND

Manufacturer Part#:

KSD1691YS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 5A TO-126
More Detail: Bipolar (BJT) Transistor NPN 60V 5A 1.3W Through ...
DataSheet: KSD1691YS datasheetKSD1691YS Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Power - Max: 1.3W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Base Part Number: KSD1691
Description

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The KSD1691YS is a single, bipolar junction transistor (BJT) application, a type of transistor that is commonly used in integrated circuit design and a popular choice for use in amplifier stages. BJTs are three-terminal, solid-state devices that are designed to amplify or switch electrical signals. In contrast to FETs, which are the other type of transistor, BJTs are current-controlled devices.

The KSD1691YS is a three-pin device, with an emitter, base and collector. The emitter is the input device, which is sensitive to the signal to be amplified. The base is the control device, providing voltage that controls the signal. Finally, the collector device collects the output signal after amplification. Because BJTs are current-controlled devices, the current at the collector determines how much signal is amplified. This current is referred to as the collector current or Ic.

The KSD1691YS is a medium-power transistor, with a collector current of 500mA, a collector-emitter voltage of 25V and a gain of 350. It is a PNP transistor, meaning that it is polarised such that current flows from the collector to the emitter when the base is forward-biased. This makes it ideal for use in audio amplifier circuits, for example for use as a power stage for electronic instruments.

The KSD1691YS works through a process called electron hole injection. Electron hole injection is the transfer of electrons and holes (positively-charged "holes") between two separate semiconductor materials, whilst their device layers are at the same voltage. In a BJT, the base terminal provides the voltage, which determines how much current is transferred between the emitter and collector. By applying a voltage to the base, a depletion region is created between the emitter and collector, which prevents the current from flowing. By adjusting the base voltage, the transistor can be made to switch on and off, controlling the flow of current between the emitter and collector.

The KSD1691YS has a wide range of applications, from audio amplifiers to switched-mode power supplies. It is particularly well-suited for use in DC-DC converter circuits, as it can be used to provide isolation between different stages. It is also used in audio circuits, where its wide range of gain values makes it useful for controlling the level of the output signal. Finally, it is also used in low-power switching circuits, where its high gain values make it ideal for use as a driver transistor.

The KSD1691YS is a versatile transistor that can be used in many different applications. It is a popular choice for its simplicity and reliability, and it is easy to see why it is so widely used in circuit design.

The specific data is subject to PDF, and the above content is for reference

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