KSD1273OTU Allicdata Electronics
Allicdata Part #:

KSD1273OTU-ND

Manufacturer Part#:

KSD1273OTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 3A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 60V 3A 30MHz 2W Throu...
DataSheet: KSD1273OTU datasheetKSD1273OTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 500mA, 4V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Base Part Number: KSD1273
Description

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KSD1273OTU is a type of bipolar junction transistor (BJT). BJTs are formed by three interconnected elements: the emitter, the collector and the base. Since the KSD1273OTU is a single BJT, this process is repeated only once. As such, it is the smallest form of BJT.

BJTs provide a wide range of applications due to their unique combination of high gain and low power dissipation. For example, they can be found in audio systems, as well as voltage regulation and switching applications. They are also commonly used as amplifiers, oscillators and frequency limiters.

The KSD1273OTU BJT works depending on the flow of electrons from the emitter to the collector. This flow is referred to as forward bias. When this happens, the electrons are forced through a thin layer of crystal, which creates a junction between the two elements. This junction acts as a conductive path for the electrons, allowing current to flow from one element to the other.

Once the electrons reach the collector, they are redirected back to the emitter through a reverse bias. This reverse bias pulls the electrons away from the junction and back toward the emitter, which allows the current to continue flowing. In this way, the transistor is able to amplify the signal.

In addition, the KSD1273OTU BJT is further enhanced by its high gain. This gain is determined by the size of the junction and the amount of current that can flow through it. The larger the junction, the higher the gain. This allows the transistor to help amplify signals to greater than around 100 times the input signal.

The KSD1273OTU single BJT is also well suited for several other applications, such as voltage regulation and the production of electric current. Voltage regulation is performed when the transistor is used as a switch between two electric components. Such components may be two resistors, two capacitors, two inductors, or a combination of any of these electric components. In this way, the voltage applied to the output will always match that of the input.

Finally, BJTs are also used to produce electric current. This is because of their high gain. This allows a BJT to take a small amount of current and convert it into a large amount. This process is referred to as amplification and can be used in any application where a large amount of current is required.

In conclusion, the KSD1273OTU single BJT is a versatile transistor. It can be used in audio systems, voltage regulation and switching applications. It also offers high gain and low power consumption. Its applications include voltage regulation, electric current generation and amplifying signals. Lastly, the transistor can also be used as a switch between two electric components.

The specific data is subject to PDF, and the above content is for reference

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