KSD1413TU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 4mA, 2A
Current - Collector Cutoff (Max):	20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 1A, 2V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

KSD1413TU is a surface mount, high voltage, NPN, transistor package. It is classified under Transistors - Bipolar (BJT) - Single. It is composed of a semiconductor material with at least three terminals for connection to an external circuit. The KSD1413TU is typically used for switching and amplification of electronic signals and for high power applications.The KSD1413TU has two major working principles: bipolar junction transistors (BJTs) and Field-Effect Transistors (FETs). BJTs are three-terminal semiconductor devices consisting of two PN junctions connected together. One of the PN junctions is the base-emitter junction and the other is the base-collector junction. FETs, on the other hand, rely on electrostatic forces between an electrical field and a semiconductor material to operate. BJTs are used primarily as amplifiers and switches in various circuits, while FETs are better suited for high power applications, such as audio transistors. In a BJT configuration, a small current at the base terminals controls a much larger current between the collector and emitter terminals. In FETs, a voltage applied to the gate terminal controls a current between source and drain terminals. Both BJTs and FETs can be used to control flow of current depending on the applied voltage.Due to its high voltage capabilities, the KSD1413TU is ideal for applications such as high power audio amplifiers, switching power supplies, and motor speed controllers. It can also be used as an oscillator to generate high frequency signals or as a modulator for digital communication. As a power amplifier, the KSD1413TU can provide excellent results in terms of efficiency and output power. The KSD1413TU has a maximum collector current of 1.0A and a maximum collector-emitter voltage of 70V. It is capable of operating at temperatures up to 150°C and its peak power dissipation is 2.25W. The KSD1413TU also has an integrated ESD protection feature that helps protect it from electrical transients.The unique physical design of the KSD1413TU also provides a cost-effective solution for high power applications. It is made with ceramic material and is equipped with an integrated solderable tab. This combination makes the KSD1413TU not only easy to mount onto a variety of surfaces, but also provides a secure connection. In conclusion, the KSD1413TU is an excellent choice for high power applications due to its high voltage capabilities, high power dissipation, and ESD protection. It also provides an inexpensive solution for many different types of circuits and systems. It is easy to use, reliable, and cost-effective. With all these features, the KSD1413TU can be used for a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description