| Allicdata Part #: | KSD1616AGBU-ND |
| Manufacturer Part#: |
KSD1616AGBU |
| Price: | $ 0.33 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 60V 1A TO-92 |
| More Detail: | Bipolar (BJT) Transistor NPN 60V 1A 160MHz 750mW T... |
| DataSheet: |  KSD1616AGBU Datasheet/PDF |
| Quantity: | 10025 |
| 1 +: | $ 0.29610 |
| 10 +: | $ 0.22050 |
| 100 +: | $ 0.12493 |
| 500 +: | $ 0.08276 |
| 1000 +: | $ 0.06345 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
| Power - Max: | 750mW |
| Frequency - Transition: | 160MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | KSD1616 |
Description
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Introduction
KSD1616AGBU is a type of single bipolar junction transistor (BJT). It is a small signal, low noise NPN BJT structure with a low thermal resistance (Rth).It is most commonly used in applications where space is limited, such as mobile transceivers and other miniature mobile electronics.
Features
KSD1616AGBU features include:
- Low collector-emitter saturation voltage (Vce(sat)) - This can help to reduce the power consumption of devices.
- Low input capacitance (Ci) - This helps ensure maximum high frequency performance.
- Low leakage current at high temperatures (Ie) - This helps ensure reliable operation at high temperatures.
- Low amplification factor (Ft) - This helps ensure a wide range of frequency of operation for the transistor.
- High stability over time and temperature.
Applications
KSD1616AGBU is most commonly used in mobile applications, such as mobile transceivers, mobile radio receivers, mobile radio transmitters, and mobile data terminal equipment. It can also be used in precision amplifiers, as well as high frequency circuits, as it has high stability over time and temperature.
Working principle
Bipolar junction transistors, like KSD1616AGBU, operate on the principle of current gain. A small current is applied to the base (B) electrode, which acts as the control terminal. This base current is amplified by the transistor, resulting in a much larger current on the collector (C) and emitter (E) terminals. The collector and emitter currents then control the collector-emitter voltage (Vce), providing a controlled form of amplification.
KSD1616AGBU is an NPN type transistor, meaning that current flows from the collector to the emitter when the base current is small. This type of transistor is used in amplifying and switching applications, where the transistor can be used to switch on and off a flow of current from the collector to the emitter.
Conclusion
In conclusion, KSD1616AGBU is a low noise, low thermal resistance single bipolar junction transistor (BJT). It is most commonly used in applications where space is limited, such as mobile transceivers and other miniature mobile electronic devices. It has low collector-emitter saturation voltage (Vce(sat)), low input capacitance (Ci), low leakage current at high temperatures (Ie), and low amplification factor (Ft). It is most commonly used in precision amplifiers, mobile radio receivers and transmitters, and mobile data terminal equipment.
The specific data is subject to PDF, and the above content is for reference
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